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参数资料
| 型号： | SMF40A-M-08 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 85K |
| 代理商： | SMF40A-M-08 |
Document Number: 85811
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 2.4, 13-Oct-09
3
SMF5V0A to SMF51A
Surface Mount ESD Protection
Diodes
Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Peak Pulse Power Rating
Fig. 2 - Pulse Derating Curve
Fig. 3 - Pulse Waveform
SMF22A
24.4
1
22
1.0
5.6
35.5
265
1
SMF24A
26.7
1
24
1.0
5.1
38.9
240
1
SMF26A
28.9
1
26
1.0
4.8
42.1
225
1
SMF28A
31.1
1
28
1.0
4.4
45.4
210
1
SMF30A
33.3
1
30
1.0
4.1
48.4
205
1
SMF33A
36.7
1
33
1.0
3.8
53.3
190
1
SMF36A
40.0
1
36
1.0
3.4
58.1
180
1
SMF40A
44.4
1
40
1.0
3.1
64.5
165
1
SMF43A
47.8
1
43
1.0
2.9
69.4
160
1
SMF45A
50.0
1
45
1.0
2.8
72.7
155
1
SMF48A
53.3
1
48
1.0
2.6
77.4
150
1
SMF51A
56.7
1
51
1.0
2.4
82.4
145
1
ELECTRICAL CHARACTERISTICS
PART NUMBER
REVERSE
BREAKDOWN
VOLTAGE
AT IT, tp ≤ 5.0 ms
TEST
CURRENT
REVERSE
WORKING
VOLTAGE
REVERSE
CURRENT
AT VRWM
MAXIMUM
PEAK PULSE
CURRENT
tp = 10/1000 s
REVERSE
CLAMPING
VOLTAGE
AT IPPM
CAPACITANCE
AT VR = 0V,
f = 1 MHz
PROTECTION
PATHS
VBR MIN.
(V)
IT
(mA)
VRWM
(V)
IR
(A)
IPPM
(A)
VC
(V)
CD TYP.
(pF)
Nchannel
P
PP
-
Peak
P
u
lse
Po
w
er
(k
W
)
0.1
1
10
0.1 s 1.0 s
10 s
td - Pulse Width (s)
100 s 1.0 ms 10 ms
Non-repetitive pulse
wavefor shown in fig. 3
TA = 25 °C
17250
0
25
50
75
100
0
75
25
50
100 125 150 175 200
Peak
P
u
lse
Po
w
er
(P
PP
)or
C
u
rrent
(I
PPM
)
Derating
in
Percentage
(
%
)
TA - Ambient Temperature
17251
0
50
100
150
I PPM
-
Peak
P
u
lse
C
u
rrent,
%
I
RSM
TJ = 25 °C
pulse width (td) is
defined as the point
where the peak current
decays to 50 % of IPPM
Peak value
IPPM
Half value
IPPM
td
10/100 s waveform
as defined by R.E.A.
0
1
2
3
4
t - Time (ms)
17252
tr=10 s
I
PPM
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMF40A-M-18 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF40A-M3-08 | 制造商:Vishay Siliconix 功能描述:ESD PROTECTION DIODE SMF DO219-M3 - Tape and Reel |
| SMF40A-M3-18 | 制造商:Vishay Siliconix 功能描述:ESD PROTECTION DIODE SMF DO219-M3 - Tape and Reel |
| SMF40AT1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 40V 200W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMF40AT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 40V 200W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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