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参数资料
型号： SMF40A-M-18
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
封装： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2
文件页数： 2/6页
文件大小： 85K
代理商： SMF40A-M-18
www.vishay.com
For technical questions, contact: ESDprotection@vishay.com
Document Number: 85811
2
Rev. 2.4, 13-Oct-09
SMF5V0A to SMF51A
Vishay Semiconductors
Surface Mount ESD Protection
Diodes
Note
Tamb = 25 °C, unless otherwise specified
SMF30A
SMF
CK
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF33A
SMF
CM
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF36A
SMF
CP
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF40A
SMF
CR
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF43A
SMF
CT
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF45A
SMF
CV
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF48A
SMF
CX
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
SMF51A
SMF
CZ
15 mg
UL 94 V-0
MSL level 1 (according J-STD-020)
260 °C/10 s at terminals
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY LEVEL
SOLDERING
CONDITIONS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
tp = 10/1000 s waveform acc. IEC 61000-4-5
IPPM
see “Electrical
Characteristics”
A
Peak pulse power
tp = 10/1000 s waveform acc. IEC 61000-4-5
PPP
200
W
tp = 8/20 s waveform acc. IEC 61000-4-5
1000
W
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Thermal resistance
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads (
≥ 40 m thick)
RthJA
180
K/W
Forward clamping voltage
IF = 12 A
VF
3.5
V
Operating temperature
Junction temperature
TJ
- 55 to + 150
°C
Storage temperature
TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS
PART NUMBER
REVERSE
BREAKDOWN
VOLTAGE
AT IT, tp ≤ 5.0 ms
TEST
CURRENT
REVERSE
WORKING
VOLTAGE
REVERSE
CURRENT
AT VRWM
MAXIMUM
PEAK PULSE
CURRENT
tp = 10/1000 s
REVERSE
CLAMPING
VOLTAGE
AT IPPM
CAPACITANCE
AT VR = 0V,
f = 1 MHz
PROTECTION
PATHS
VBR MIN.
(V)
IT
(mA)
VRWM
(V)
IR
(A)
IPPM
(A)
VC
(V)
CD TYP.
(pF)
Nchannel
SMF5V0A
6.40
10
5.0
400
21.7
9.2
1030
1
SMF6V0A
6.67
10
6.0
400
19.4
10.3
1010
1
SMF6V5A
7.22
10
6.5
250
17.9
11.2
850
1
SMF7V0A
7.78
10
7.0
100
16.7
12.0
750
1
SMF7V5A
8.33
1
7.5
50
15.5
12.9
730
1
SMF8V0A
8.89
1
8.0
25
14.7
13.6
670
1
SMF8V5A
9.44
1
8.5
10
13.9
14.4
660
1
SMF9V0A
10.0
1
9.0
5.0
13.5
15.4
620
1
SMF10A
11.1
1
10
2.5
11.8
17.0
570
1
SMF11A
12.2
1
11
2.5
11.0
18.2
460
1
SMF12A
13.3
1
12
2.5
10.1
19.9
440
1
SMF13A
14.4
1
13
1.0
9.3
21.5
420
1
SMF14A
15.6
1
14
1.0
8.6
23.2
370
1
SMF15A
16.7
1
15
1.0
8.2
24.4
350
1
SMF16A
17.8
1
16
1.0
7.7
26.0
340
1
SMF17A
18.9
1
17
1.0
7.2
27.6
310
1
SMF18A
20.0
1
18
1.0
5.8
29.2
305
1
SMF20A
22.2
1
20
1.0
6.2
32.4
207
1
相关PDF资料
PDF描述
SMF43A-M-18 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
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SMF6V5A-M-08 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
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相关代理商/技术参数
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