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参数资料
| 型号： | SMF54A/G1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219 |
| 封装： | PLASTIC, SMF, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 25K |
| 代理商： | SMF54A/G1 |
SMF5.0A thru SMF188A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88433
www.vishay.com
12-Sep-02
3
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF = 3.5V at IF = 12A (uni-directional only)
Breakdown
Maximum
Device
Voltage
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Marking
V(BR) (V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Device Type
Code
(Min)
(1)
at IT (mA)
VWM (V)
ID (A)
(A) (2,3)
VC (V)
SMF54A
RE
60.0
1.0
54
1.0
1.7
87.1
SMF58A
RG
64.4
1.0
58
1.0
1.6
93.6
SMF60A
RK
66.7
1.0
60
1.0
1.5
96.8
SMF64A
RM
71.1
1.0
64
1.0
1.5
103
SMF70A
RP
77.8
1.0
70
1.0
1.3
113
SMF75A
RR
83.3
1.0
75
1.0
1.2
121
SMF78A
RT
86.7
1.0
78
1.0
1.2
126
SMF85A
RV
94.4
1.0
85
1.0
1.1
137
SMF90A
RX
100
1.0
90
1.0
146
SMF100A
RZ
111
1.0
100
1.0
0.9
162
SMF110A
SE
122
1.0
110
1.0
0.8
177
SMF120A
SG
133
1.0
120
1.0
0.8
193
SMF130A
SK
144
1.0
130
1.0
0.7
209
SMF150A
SM
167
1.0
150
1.0
0.6
243
SMF160A
SP
178
1.0
160
1.0
0.6
259
SMF170A
SR
189
1.0
170
1.0
0.5
275
SMF188A
SS
209
1.0
188
1.0
0.5
328
Notes: (1) V(BR) measured after IT applied for 300
s square wave pulse or equivalent
(2) Surge current waveform: 10/1000
s
(3) SMF78A and below can withstand higher currents (to 250W for10/1000
s pulse), but VC must be increased by approximately 5% (Ipp = 250W/VC)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
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