型号: | SMF6.5A/G2 |
厂商: | VISHAY SEMICONDUCTORS |
元件分类: | TVS二极管 - 瞬态电压抑制 |
英文描述: | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
封装: | PLASTIC, SMF, 2 PIN |
文件页数: | 3/5页 |
文件大小: | 122K |
代理商: | SMF6.5A/G2 |
相关PDF资料 |
PDF描述 |
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SMF8.0A/G1 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
SMF8.0A | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
SMF8.5A/G1 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
SMF18A/G1 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
SMF6.5A/G1 | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
相关代理商/技术参数 |
参数描述 |
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SMF6V0A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |
SMF6V0A-GS08 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
SMF6V0A-GS18 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
SMF6V0A-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
SMF6V5A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |