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参数资料
| 型号： | SMF6.5A |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 代理商： | SMF6.5A |
PAGE . 3
REV.0-MAR.8.2005
Fig.1 PEAK PULSE POWER RATING CURVE
Fig.2 DERATING CURVE
Fig.3 PULSE WAVEFORM
Fig.4 TYPICAL JUNCTION CAPACITANCE
td,PULSE WIDTH, micro sec
T,TIME,ms
T ,AMBIENT TEMPERATURE, C
A
O
0.1
1.0
Non-Repetitve
Pulse Wavefom
Shown in Figure.3
T= 25 C
A
O
1.0
10
100
1000
10000
P
,PEAK
PULSE
F
OR
W
ARD,KW
PPM
I
,PEAK
PULSE
CURRENT
,%
PPM
PEAK
PULSE
F
OR
W
ARD
(P
)OR
CURRENT
(I
)
DERA
TING
IN
PERCENT
AGE
%
PP
100
75
50
25
0
125
150
175
200
25
50
75
100
0
1.0
2.0
3.0
4.0
0
50
100
150
10/1000 u se c Wa ve fo rm
as De fine d b ye R.E.A.
Ha lf Va lue -Ip p
2
e-kt
td
T= 25 C
Pulse Width (td) is Defined
as the Point where the Peak
Current Decayst to 50% of Ipp
A
O
tf = 10usec
Peak Value
Ippm
C
J
,C
A
P
A
C
IT
A
N
C
E
,p
F
1.0
2.0
5.0
10
20
50 100
200
Me a sure d a t
Ze ro Bia s
Tj= 25 C
O
f= 1.0MHZ
Vsig = 50mVp -p
10,000
1,000
100
10
V(
), REVERSE STAND-OFF VOLTAGE, VOLTS
RWM
MEASURED
@ 50%V
RWM
SMF5.0A SERIES
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMF6V0A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |
| SMF6V0A-GS08 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF6V0A-GS18 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF6V0A-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
| SMF6V5A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |
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