参数资料
| 型号： | SMF6.5AT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 200W 6.5V SOD123FL |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 6.5V |
| 电压 - 击穿： | 7.22V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123F |
| 供应商设备封装： | SOD-123FL |
| 包装： | 带卷 (TR) |
| 其它名称： | SMF6.5AT1GOS |
SMF5.0AT1G Series, SZSMF5.0AT1G Series
MAXIMUM RATINGS
Rating
Maximum P pk Dissipation (PW ? 10/1000 m s) (Note 1) SMF5.0A ? SMF58A
Maximum P pk Dissipation @ T A = 25 ° C, (PW ? 8/20 m s) (Note 2)
DC Power Dissipation
@ T A = 25 ° C (Note 3)
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient (Note 3)
Thermal Resistance, Junction ? to ? Lead (Note 3)
Operating and Storage Temperature Range
Symbol
P pk
P pk
° P D °
R q JA
R q Jcathode
T J , T stg
Value
200
1000
385
4.0
325
26
? 55 to +150
Unit
W
W
° mW
mW/ ° C
° C/W
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current pulse at T A = 25 ° C, per waveform of Figure 2.
2. Non ? repetitive current pulse at T A = 25 ° C, per waveform of Figure 3.
3. Mounted with recommended minimum pad size, DC board FR ? 4.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 4) = 12 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
Forward Current
I PP
V F Forward Voltage @ I F
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
http://onsemi.com
2
Uni ? Directional TVS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMF6V0A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |
| SMF6V0A-GS08 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF6V0A-GS18 | 功能描述:ESD 抑制器 6.0 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF6V0A-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
| SMF6V5A | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES |
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