参数资料
型号: SMF6V0A-M-GS18
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMF, 2 PIN
文件页数: 2/6页
文件大小: 73K
代理商: SMF6V0A-M-GS18
www.vishay.com
For technical questions, contact: ESDprotection@vishay.com
Document Number: 83355
2
Rev. 1.0, 22-Sep-10
SMF5V0A-M to SMF51A-M
Vishay Semiconductors
Surface Mount ESD Protection
Diodes
SMF26A-M
SMF
PE
15 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
SMF28A-M
PG
SMF30A-M
PK
SMF33A-M
PM
SMF36A-M
PP
SMF40A-M
PR
SMF43A-M
PT
SMF45A-M
PV
SMF48A-M
PX
SMF51A-M
PZ
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE CODE
WEIGHT
MOLDING
COMPOUND
FLAMMABILITY
RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Peak pulse current
tp = 10/1000 s waveform acc. IEC 61000-4-5
IPPM
see “Electrical
Characteristics”
A
Peak pulse power
tp = 10/1000 s waveform acc. IEC 61000-4-5
PPP
200
W
tp = 8/20 s waveform acc. IEC 61000-4-5
1000
W
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
± 30
kV
Thermal resistance
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads (
≥ 40 m thick)
RthJA
180
K/W
Forward clamping voltage
IF = 12 A
VF
3.5
V
Operating temperature
Junction temperature
TJ
- 55 to + 150
°C
Storage temperature
TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PART NUMBER
REVERSE
BREAKDOWN
VOLTAGE
at IT, tp
≤ 5 ms
TEST
CURRENT
REVERSE
WORKING
VOLTAGE
REVERSE
CURRENT
at VRWM
MAXIMUM
PEAK PULSE
CURRENT
tp = 10/1000 s
REVERSE
CLAMPING
VOLTAGE
at IPPM
CAPACITANCE
at VR = 0 V,
f = 1 MHz
PROTECTION
PATHS
VBR MIN.
(V)
IT
(mA)
VRWM
(V)
IR
(A)
IPPM
(A)
VC
(V)
CD TYP.
(pF)
Nchannel
SMF5V0A-M
6.40
10
5
400
21.7
9.2
1030
1
SMF6V0A-M
6.67
10
6
400
19.4
10.3
1010
1
SMF6V5A-M
7.22
10
6.5
250
17.9
11.2
850
1
SMF7V0A-M
7.78
10
7
100
16.7
12
750
1
SMF7V5A-M
8.33
1
7.5
50
15.5
12.9
730
1
SMF8V0A-M
8.89
1
8
25
14.7
13.6
670
1
SMF8V5A-M
9.44
1
8.5
10
13.9
14.4
660
1
SMF9V0A-M
10
1
9
5
13.5
15.4
620
1
SMF10A-M
11.1
1
10
2.5
11.8
17
570
1
SMF11A-M
12.2
1
11
2.5
11
18.2
460
1
SMF12A-M
13.3
1
12
2.5
10.1
19.9
440
1
SMF13A-M
14.4
1
13
1
9.3
21.5
420
1
SMF14A-M
15.6
1
14
1
8.6
23.2
370
1
SMF15A-M
16.7
1
15
1
8.2
24.4
350
1
SMF16A-M
17.8
1
16
1
7.7
26
340
1
SMF17A-M
18.9
1
17
1
7.2
27.6
310
1
相关PDF资料
PDF描述
SMF7V0A-M-GS18 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SMF9V0A-M-GS18 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SMF17A-M-GS08 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SMF48A-M-GS18 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SMF18A-M-GS08 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
相关代理商/技术参数
参数描述
SMF6V5A 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:SURFACE MOUNT ESD PROTECTION DIODES
SMF6V5A-GS08 功能描述:ESD 抑制器 6.5 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
SMF6V5A-GS18 功能描述:ESD 抑制器 6.5 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
SMF6V5A-M 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes
SMF7 制造商:Ferraz Shawmut 功能描述:Fuse Holder