参数资料
| 型号： | SMF8.0AT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 200W 8.0V SOD123FL |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 8V |
| 电压 - 击穿： | 8.89V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123F |
| 供应商设备封装： | SOD-123FL |
| 包装： | 剪切带 (CT) |
| 其它名称： | SMF8.0AT1GOSCT |
SMF5.0AT1G Series, SZSMF5.0AT1G Series
MAXIMUM RATINGS
Rating
Maximum P pk Dissipation (PW ? 10/1000 m s) (Note 1) SMF5.0A ? SMF58A
Maximum P pk Dissipation @ T A = 25 ° C, (PW ? 8/20 m s) (Note 2)
DC Power Dissipation
@ T A = 25 ° C (Note 3)
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient (Note 3)
Thermal Resistance, Junction ? to ? Lead (Note 3)
Operating and Storage Temperature Range
Symbol
P pk
P pk
° P D °
R q JA
R q Jcathode
T J , T stg
Value
200
1000
385
4.0
325
26
? 55 to +150
Unit
W
W
° mW
mW/ ° C
° C/W
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current pulse at T A = 25 ° C, per waveform of Figure 2.
2. Non ? repetitive current pulse at T A = 25 ° C, per waveform of Figure 3.
3. Mounted with recommended minimum pad size, DC board FR ? 4.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 4) = 12 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
Forward Current
I PP
V F Forward Voltage @ I F
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
http://onsemi.com
2
Uni ? Directional TVS
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