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参数资料
| 型号： | SMF85AT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | LEAD FREE, PLASTIC, CASE 498-01, SOD-123FL, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 94K |
| 代理商： | SMF85AT1G |
Uni-Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
SMF5.0AT1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Ppk
175
W
Ppk
200
W
Ppk
1000
W
Derate above 25
°C
Thermal Resistance, Junction-to-Ambient (Note 3)
°PD°
RqJA
385
4.0
325
°mW
mW/
°C
°C/W
Thermal Resistance, Junction-to-Lead (Note 3)
RqJcathode
26
°C/W
Operating and Storage Temperature Range
TJ, Tstg
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. Mounted with recommended minimum pad size, DC board FR-4.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
duty cycle = 4 pulses per minute maximum.
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