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参数资料
| 型号： | SML010FBDH12 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 桥式整流 |
| 英文描述： | 10 A, 1200 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE, MO-078AA |
| 封装： | TO-258D, 5 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 122K |
| 代理商： | SML010FBDH12 |
SILICON CARBIDE POWER
SCHOTTKY RECTIFIER
DIODE BRIDGE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8978
Issue 1
Page 1 of 2
SML010FBDH12
1200V, 10A Full Bridge Rectifier Configuration
High Temperature Operation Tj = 200°C
Effective Zero Reverse and Forward Recovery
High Speed Low Loss Switching
High Frequency Operation
High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Per Die, T
c = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Breakdown Voltage
1200V
VRSM
Surge Peak Reverse Voltage
1200V
VDC
DC Blocking Voltage
1200V
IF(AVG)
Average Forward Current
10A
IFSM
Non Repetitive Peak Forward Surge Current, tp = 10s
45A
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +225°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2.0
°C/W
ELECTRICAL CHARACTERISTICS (Per Die, Tc = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
IF = 10A
1.4
1.8
VF
(1)
Forward Voltage
Tc = 175°C
2.5
3.0
V
VR = VRRM
50
200
IR
Reverse Current
Tc = 175°C
100
1000
A
DYNAMIC CHARACTERISTICS
QC
Total Capacitative
Charge
IF = 10A
VR = 1200V
di/dt = 500A/s
TJ = 25°C
61
nC
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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