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参数资料
| 型号： | SML1200HIC-FB |
| 厂商： | SEMELAB LTD |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE, MO-078AA |
| 封装： | HERMETIC SEALED, CERAMIC, TO-258D, 5 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 131K |
| 代理商： | SML1200HIC-FB |
ULTRAFAST RECOVERY
POWER RECTIFIER DIODE
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8661
Issue 1
Page 1 of 2
SML1200HIC-FB
1200V, 8A Full Bridge Rectifier Configuration
Fast Reverse Recovery (trr = 40ns)
High Speed Low Loss Switching
Hermetic TO258D Isolated Package with Ceramic Seals
Switch Mode Power Supply applications
High-Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (Per Die, T
A = 25°C unless otherwise stated)
VRRM
Repetitive Peak Reverse Breakdown Voltage
1200V
VRSM
Surge Peak Reverse Voltage
1200V
VDC
DC Blocking Voltage
1200V
IF(AVG)
Average Forward Current
8A
IFSM
Surge Current, tp = 8.3ms
56A
TJ
Junction Temperature Range
-65 to +175°C
Tstg
Storage Temperature Range
-65 to +175°C
THERMAL PROPERTIES (Per Die)
Symbols
Parameters
Max.
Units
RθJC
Thermal Resistance, Junction To Case
2.4
°C/W
ELECTRICAL CHARACTERISTICS (Per Die, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
IF = 8.0A
2.75
VF
(1)
Forward Voltage
TA = 150°C
1.79
V
VR = VRRM
100
IR
Reverse Current
TA = 150°C
500
A
DYNAMIC CHARACTERISTICS
IF = 1.0A
VR = 30V
trr
Reverse Recovery Time
di/dt = 100A/s (min)
40
ns
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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