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Document Number 2362
Issue 1
SML15EUZ06K
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Enhanced Ultrafast
Recovery Diode
600 Volt, 15 Amp
TECHNOLOGY
The planar passivated and enhanced ultrafast recovery
diode features a triple charge control action utilising
Semelab’s Graded Buffer Zone technology combined with
low emitter efficiency and local lifetime control techniques.
BENEFITS
Very fast recovery for low switching losses
Ultra soft recovery with low EMI generation
High dynamic ruggedness under all conditions
Low temperature dependency
Low on-state losses with positive temperature coefficient
Stable blocking voltage and low leakage current
Avalanche rated for high reliability circuit operation
APPLICATIONS
Freewheeling Diode for IGBTs and MOSFETs
Uninterruptible Power Supplies UPS
Switch Mode Power Supplies SMPS
Inverse and Clamping Diode
Snubber Diode
Fast Switching Rectification
VRRM
Peak Repetitive Reverse Voltage
VR
DC Reverse Blocking Voltage
IFAV
Average Forward Current @Tc = 85°C
IFSM(surge)
Repetitive Forward Current
IFS(surge)
Non-Repetitive Forward Current(10msec pulse)
PD
Power Dissipation @Tc = 85°C
WAVL
Avalanche Energy(L=40mH)
TJ ,TSTG
Operating & Storage Junction Temperature
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
600V
15A
40A
150A
40W
10mJ
- 55 to 150°C
Key Parameters
VR
(max)
600V
VF
(typ)
2.3V
IF
(max)
15A
trr
(max)
30nS
12
Back of Case
Cathode
1- Cathode
2 - Anode
SML
15EUZ06K
12
See package outline for mechanical data and more details
D2 Package