- 您现在的位置：买卖IC网 > PDF目录225200 > SML20L100R3 (SEMELAB LTD) 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF资料下载
参数资料
| 型号： | SML20L100R3 |
| 厂商： | SEMELAB LTD |
| 元件分类： | JFETs |
| 英文描述： | 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 文件页数： | 2/2页 |
| 文件大小： | 20K |
| 代理商： | SML20L100R3 |
SML20L100
6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
100
400
1.3
330
5.8
IS
ISM
VSD
trr
Qrr
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/ms
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
mC
Characteristic
Min.
Typ.
Max. Unit
0.24
40
RqJC
RqJA
Junction to Case
Junction to Ambient
°C/W
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
mS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 0.6W
pF
nC
ns
8500
1950
560
290
66
120
16
25
48
5
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VGS = 0V , ID = 250mA
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
VGS = ±30V , VDS = 0V
VDS = VGS , ID = 2.5mA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
200
25
250
±100
2
4
100
0.022
V
mA
nA
V
A
W
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS
相关PDF资料 |
PDF描述 |
|---|---|
| SML20SUZ03KR3 | 20 A, 300 V, SILICON, RECTIFIER DIODE |
| SML25EUZ06DR3 | 25 A, 600 V, SILICON, RECTIFIER DIODE, TO-220 |
| SML30EUZ12BR3 | 30 A, 1200 V, SILICON, RECTIFIER DIODE |
| SML40EUZ06BR3 | 40 A, 600 V, SILICON, RECTIFIER DIODE |
| SML50EUZ12BR3 | 50 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SML20S56 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20S67 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20T75 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20W65 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML-21 | 制造商:ROHM 制造商全称:Rohm 功能描述:SML-21 Series |
发布紧急采购，3分钟左右您将得到回复。