- 您现在的位置：买卖IC网 > PDF目录40350 > SML50EUZ12JDR3 (SEMELAB LTD) 50 A, 1200 V, SILICON, RECTIFIER DIODE PDF资料下载
参数资料
| 型号： | SML50EUZ12JDR3 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 整流器 |
| 英文描述： | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| 封装： | SOT-227, 4 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 30K |
| 代理商： | SML50EUZ12JDR3 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
A
mA
pF
C
A
nsec
C
A
nsec
°C/W
°C
nH
N.m
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 2418
Issue 1
SML50EUZ12JD
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is
believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in
its use. Semelab encourages customers to verify that datasheets are current before placing orders.
VF
Forward Voltage Drop
IR
Leakage Current
CT
Junction Capacitance
Qrr
Reverse Recovery Charge
Irr
Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irr
Reverse Recovery Current
trr
Reverse Recovery Time
trr
Reverse Recovery Time
IF = 50A
Tj = 25°C
IF = 50A
Tj = 125°C
IF = 25A
Tj = 25°C
VR = 1200V
Tj = 25°C
VR = 1200V
Tj = 125°C
VR = 200V
Tj = 25°C
VR = 600V
IF = 50A
di / dt = 1000A/sTJ = 25°C
VR = 600 V
IF = 50A
di / dt = 1000A/sTJ = 125°C
VR = 50V
IF = 1A
di / dt = 100A/sTJ = 25°C
33.5
3.7
2.25
1.5
1000
15
1.37
42
65
2.66
63
85
50
0.6
300
10
1.1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
STATIC ELECTRICAL CHARACTERISTIC
DYNAMIC ELECTRICAL CHARACTERISTIC
THERMAL AND MECHANICAL CHARACTERISTICS
Rθjc
Junction to Case Thermal Resistance
TL
Lead Temperature
LS
Stray Inductance
Torque
Mounting Torque
7.8 (.307)
8.2 (.322)
31.5 (1.240)
31.7 (1.248)
W = 4.1 (.161)
W = 2.3 (.169)
H = 4.8 (.187)
H = 4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.162)
(2 places)
r = 4.0 (.157)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Cathode 1
Cathode 2
Anode 1
Cathode 2
Anode 2
Cathode 1
Anode1
Anti-parallel
Parallel
Dimensions in Millimeters and (Inches)
相关PDF资料 |
PDF描述 |
|---|---|
| SML50SUZ03LCR3 | 50 A, 300 V, SILICON, RECTIFIER DIODE, TO-264 |
| SML50SUZ03S | 50 A, 300 V, SILICON, RECTIFIER DIODE |
| SML50SUZ12JD | 50 A, 1200 V, SILICON, RECTIFIER DIODE |
| SML60SUZ06JDR3 | 60 A, 600 V, SILICON, RECTIFIER DIODE |
| SML75EUZ12LR3 | 75 A, 1200 V, SILICON, RECTIFIER DIODE, TO-264 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SML50H19 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50H24 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50HB06 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:HIGH PERFORMANCE POWER SEMICONDUCTORS |
| SML50J44 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML50J50 | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
发布紧急采购，3分钟左右您将得到回复。