ENHANCED ULTRAFAST
RECOVERY DIODE
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Document Number 3914
Issue 5
Page 1 of 3
SML75EUZ14JD
Very fast recovery for low switching losses.
Ultra soft recovery for low EMI generation.
High dynamic ruggedness under all conditions.
Low temperature dependency.
Low on-state losses with positive temperature coefficient.
Stable blocking voltage and low leakage current.
Avalanche rated for high reliability circuit operation.
Applications include: Freewheel Diode for IGBTs and MOSFETS,
Snubber Diode, Fast Switching Rectification, Switch Mode Power
Supplies (SMPS) and Uninterruptable Power Supplies (UPS).
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VRRM
Peak Repetitive Reverse Voltage
1400V
VR
DC Reverse Blocking Voltage
1400V
IFAV
Average Forward Current
75A
IFSM(surge) Repetitive Forward Current
175A
IFSM(surge) Non-Repetitive Forward Current
750A
PD
Power Dissipation
Tc = 25°C
312.5W
Derate Above 25°C
2.5W/°C
WAVL
Avalanche Energy
50mJ
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ.
Max. Units
R JC
Thermal Resistance, Junction To Case
0.4
°C/W
MECHANICAL CHARACTERISTICS
Symbols
Parameters
Min.
Typ.
Max. Units
TL
Lead Temperature
300
°C
LS
Stray Inductance
10
nH
Torque
Mounting Torque
1.1
N.m