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参数资料
| 型号： | SMLJ33C |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 110K |
| 代理商： | SMLJ33C |
MDE Semiconductor, Inc.
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES SMLJ SERIES
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 Fax : 760-564-2414
100
150
200
250
300
1
10
100
Number of Cycles at 60 Hz
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
8.3ms Single Half Sine-Wave
(JEDEC Method)TJ=TJ max.
I FS
M
-P
ea
k
F
or
w
ar
d
S
ur
ge
C
ur
rent
(A
)
t - Time(ms)
3.0
4.0
150
0
1.0
2.0
tr = 10μsec.
Peak Value
IPPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of IPPM
10/1000μsec.Waveform
as defined by R.E.A.
td
Fig.3 - Pulse Waveform
4.0
50
Half Value- IPPM
2
100
I PPM
-
P
eak
P
uls
eC
ur
rent
,%
I RS
M
3.0
0
0.1
1
10
100
10ms
0.1μs
1.0μs
10μs
100μs
1.0ms
td - Pulse Width (sec.)
Fig. 1 - Peak Pulse Power Rating Curve
P
PPM
-Pe
ak
Pu
ls
ePo
we
r(k
W)
Non-repetitive pulse
waveform shown in
Fig.3 TA = 25°C
10
100
1000
10000
1
10
100
1000
5
10
100
1000
10000
C
J-
C
apac
itanc
e(
pF
)
Fig. 4 - Typical Junction Capacitance
VWM - Reverse Stand-Off Voltage (V)
Unidirectional
Bidirectional
f = 1MHz
Vsig = 50mVp-p
TJ = 25°C
VR = 0
500
VR = Rated
Stand-off
10
P
M
(AV)
,S
teady
S
tat
eP
ow
er
D
is
si
pat
ion
(
W
)
0
25
50
75
100
125
150
175
200
0
1.0
2.0
3.0
4.0
Fig. 5 - Steady State Power
Derating Curve
TL - Lead Temperature (°C)
5.0
6.0
7.0
8.0
60Hz
Resistive or
Inductive Load
0
12.5
25
37.5
50
62.5
75
87.5
100
0
25
50
75
100
125
150
175
200
Fig.2 - Pulse Derating Curve
P
eak
P
uls
eP
ow
er
(
P PP
)
o
rC
ur
re
nt
(
I PP
)
D
er
at
ing
in
P
er
cent
age,
%
TA - Ambient Temperature (°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMLJ33C/TR13 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
| SMLJ33CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 33volts 5uA 56.2 Amps Bi-Dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMLJ33CA | 制造商:Bourns Inc 功能描述:Diode 制造商:Bourns Inc 功能描述:DIODE |
| SMLJ33CA | 制造商:Bourns Inc 功能描述:DIODE TVS 33V 3000W SMC |
| SMLJ33CA/TR13 | 制造商:Microsemi Corporation 功能描述: |
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