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参数资料
| 型号： | SMLJ51C |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 4/4页 |
| 文件大小： | 189K |
| 代理商： | SMLJ51C |
SURFACE MOUNT 3000 Watt
Transient Voltage Suppressor
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
Copyright
2009
4-06-2009 REV J
WWW
.Micr
o
semi
.CO
M
S C O T TS DALE DIVISION
SMLJ5.0 thru SMLJ170CA, e3
and SMLG5.0 thru SMLG170CA, e3
SML
5.0
–
170V,
e3
GRAPHS
FIGURE 2
– PULSE WAVEFORM
100
10
1.0
0
(Waveform – See Figure 2)
Non-repetitive
(P
PP
)–
Peak
Pul
se
Power
-
kW
Test wave form
parameterxs
tr = 10
μsec.
tp = 1000
μsec.
tp – Pulse Time – sec
1
μs
10
μsec
100
μsec
1ms
10ms
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
PAD LAYOUT
INCHES
mm
A
.390
9.90
B
.110
2.79
C
.150
3.81
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
C:
Capacitance
in
pico
farads
TL Lead Temperature
oC
BV: Breakdown Voltage in Volts
FIGURE 3 –
Derating Curve
FIGURE 4
Typical Capacitance vs.
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMLJ
SMLG
Breakdown Voltage
PACKAGE DIMENSIONS
DO-214AB
DO-215AB
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115 .260 .220 .305 .077 .380
.025
.030
MAX
.121 .280 .245 .320 .104 .400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92 6.60 5.59 7.75 1.95 9.65
0.635 .760
MAX
3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
相关PDF资料 |
PDF描述 |
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| SMLG30C | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMLG10CTR | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMLG15ATR | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMLG170TR | 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMLG20CTR | 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMLJ51C/TR13 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel |
| SMLJ51CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 51volts 5uA 36.4 Amps Bi-Dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMLJ51CA/TR13 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 51V 3KW 2-Pin DO-214AB T/R |
| SMLJ51CAE3/TR13 | 制造商:Microsemi Corporation 功能描述:3000W, STAND-OFF VOLTAGE = 51V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 3KW 51V 5% BIDIR SMCJ |
| SMLJ51CA-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 51V 3KW 2-Pin SMC T/R |
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