参数资料
| 型号： | SMLJ6.0CA |
| 厂商： | Bourns Inc. |
| 文件页数： | 4/5页 |
| 文件大小： | 0K |
| 描述： | DIODE TVS 6.0V 3000W BI 5% SMD |
| 产品目录绘图： | SMCJ,SMLJ Series SMCJ,SMLJ Series Footprint |
| 特色产品： | SMAJ/SMBJ/SMCJ/SMLJ - Discrete TVS Diodes |
| 标准包装： | 1 |
| 系列： | SMLJ |
| 电压 - 反向隔离（标准值）： | 6V |
| 电压 - 击穿： | 6.67V |
| 功率（瓦特）： | 3000W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AB，SMC |
| 供应商设备封装： | SMC |
| 包装： | 标准包装 |
| 产品目录页面： | 2377 (CN2011-ZH PDF) |
| 其它名称： | SMLJ6.0CABDKR SMLJ6.0CADKR SMLJ6.0CADKR-ND |
SMLJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
100
Maximum Non-Repetitive Surge Current
300
250
75
200
50
25
150
100
Pulse Width 8.3 ms
10 x 1000 Waveform as Defined
50
Single Half Sine-Wave
0
by R.E.A.
0
(JEDEC Method)
0
25
50
75
100
125
150
175
200
1
2
5
10
20
50
100
Pulse Waveform
Junction Temperature ( °C)
Number of Cycles at 60 Hz
Typical Junction Capacitance
100000
TR=10 μs
100
Peak value (IRSM)
10000
Half value=
IRSM
2
Bidirectional v-0v
Pulse width (TP)
is defined as that point
1000
Unidirectional
Unidirectional v-0v
50
where the peak current
decays to 50 % of IPSM.
100
@ VR
TA=25 °C
TP
10 x 1000 waveform
as defined by R.E.A.
10
TJ = 25 °C
f = 1.0 MHz
Bidirectional
Vsig = 50 mVp-p
@ VR
0
0
1.0
2.0
3.0
4.0
1
1
10
100
1000
Pulse Rating Curve
100
T, Time (ms)
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
VBR - Reverse Breakdown Voltage (V)
Steady State Power Derating Curve
5.0
4.0
10
3.0
2.0
1.0
0.1
8.0 mm Lead Areas
1.0
0.0
60 Hz Resistive or
Inductive Load
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0
25
50
75
100
125
150
175
200
TP, Pulse Width
TL, Lead Temperature (°C)
Speci?cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
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