参数资料
型号: SMLJ6.5C
元件分类: 参考电压二极管
英文描述: 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 2/3页
文件大小: 110K
代理商: SMLJ6.5C
MDE Semiconductor, Inc.
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES SMLJ SERIES
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 Fax : 760-564-2414
100
150
200
250
300
1
10
100
Number of Cycles at 60 Hz
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
8.3ms Single Half Sine-Wave
(JEDEC Method)TJ=TJ max.
I FS
M
-P
ea
k
F
or
w
ar
d
S
ur
ge
C
ur
rent
(A
)
t - Time(ms)
3.0
4.0
150
0
1.0
2.0
tr = 10μsec.
Peak Value
IPPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of IPPM
10/1000μsec.Waveform
as defined by R.E.A.
td
Fig.3 - Pulse Waveform
4.0
50
Half Value- IPPM
2
100
I PPM
-
P
eak
P
uls
eC
ur
rent
,%
I RS
M
3.0
0
0.1
1
10
100
10ms
0.1μs
1.0μs
10μs
100μs
1.0ms
td - Pulse Width (sec.)
Fig. 1 - Peak Pulse Power Rating Curve
P
PPM
-Pe
ak
Pu
ls
ePo
we
r(k
W)
Non-repetitive pulse
waveform shown in
Fig.3 TA = 25°C
10
100
1000
10000
1
10
100
1000
5
10
100
1000
10000
C
J-
C
apac
itanc
e(
pF
)
Fig. 4 - Typical Junction Capacitance
VWM - Reverse Stand-Off Voltage (V)
Unidirectional
Bidirectional
f = 1MHz
Vsig = 50mVp-p
TJ = 25°C
VR = 0
500
VR = Rated
Stand-off
10
P
M
(AV)
,S
teady
S
tat
eP
ow
er
D
is
si
pat
ion
(
W
)
0
25
50
75
100
125
150
175
200
0
1.0
2.0
3.0
4.0
Fig. 5 - Steady State Power
Derating Curve
TL - Lead Temperature (°C)
5.0
6.0
7.0
8.0
60Hz
Resistive or
Inductive Load
0
12.5
25
37.5
50
62.5
75
87.5
100
0
25
50
75
100
125
150
175
200
Fig.2 - Pulse Derating Curve
P
eak
P
uls
eP
ow
er
(
P PP
)
o
rC
ur
re
nt
(
I PP
)
D
er
at
ing
in
P
er
cent
age,
%
TA - Ambient Temperature (°C)
相关PDF资料
PDF描述
SMLJ9.0A 3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMBJ30C 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ45A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ8.0A 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMCJ11CA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相关代理商/技术参数
参数描述
SMLJ7.0 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 7V 3KW 2PIN DO-214AB - Bulk
SMLJ7.0/TR13 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Tape and Reel
SMLJ7.0A 功能描述:TVS 二极管 - 瞬态电压抑制器 7volts 200uA 250 Amps Uni-Dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMLJ7.0AE3/TR13 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 7V 3KW 2-Pin DO-214AB T/R 制造商:Microsemi Corporation 功能描述:3000W, STAND-OFF VOLTAGE = 7.0V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 3KW 7.0V 5% UNIDIR SMCJ
SMLJ7.0AT7 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 7V 3KW 2-Pin DO-214AB T/R