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参数资料
| 型号： | SMMBD301LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SILICON, VHF-UHF BAND, MIXER DIODE, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 65K |
| 代理商： | SMMBD301LT1 |
Semiconductor Components Industries, LLC, 2007
January, 2007 Rev. 4
1
Publication Order Number:
MBD301/D
MBD301, MMBD301LT1
Preferred Device
Silicon HotCarrier Diodes
SCHOTTKY Barrier Diodes
These devices are designed primarily for highefficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for lowcost, highvolume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
Extremely Low Minority Carrier Lifetime 15 ps (Typ)
Very Low Capacitance 1.5 pF (Max) @ VR = 15 V
Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301
PbFree Packages are Available
MAXIMUM RATINGS
MBD301
MMBD301LT1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PF
280
2.8
200
2.0
mW
mW/
°C
Operating Junction
Temperature Range
TJ
55 to +125
°C
Storage Temperature Range
Tstg
55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
MBD
301
AYWW
G
Preferred devices are recommended choices for future use
and best overall value.
TO92
(TO226AC)
CASE 182
STYLE 1
4T M
G
MBD301
SOT23
(TO236)
CASE 318
STYLE 8
30 VOLTS
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
1
2
3
1
2
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
1
MMBD301LT1
M
= Date Code
G
= PbFree Package
MARKING
DIAGRAM
(Note: Microdot may be in either location)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMMBD301LT1G | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SMMBD330T1G | 功能描述:DIODE SCHOTTKY 200MA 30V SOT-323 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| SMMBD7000LT1G | 功能描述:二极管 - 通用，功率，开关 DL SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| SMMBD7000LT3G | 功能描述:DIODE SWITCH DUAL 100V SOT-23 RoHS:是 类别:分离式半导体产品 >> 二极管，整流器 - 阵列 系列:- 其它有关文件:STTH10LCD06C View All Specifications 标准包装:1,000 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:2V @ 5A 电流 - 在 Vr 时反向漏电:1µA @ 600V 电流 - 平均整流 (Io)（每个二极管）:5A 电压 - (Vr)（最大）:600V 反向恢复时间(trr):50ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:1 对共阴极 安装类型:表面贴装 封装/外壳:TO-263-3，D²Pak（2 引线+接片），TO-263AB 供应商设备封装:D2PAK 包装:带卷 (TR) 产品目录页面:1553 (CN2011-ZH PDF) 其它名称:497-10107-2 |
| SMMBD701LT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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