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参数资料
型号： SMMBD914LT1
厂商： ON SEMICONDUCTOR
元件分类： 参考电压二极管
英文描述： 0.2 A, 100 V, SILICON, SIGNAL DIODE, TO-236AB
封装： CASE 318-08, TO-236, 3 PIN
文件页数： 1/3页
文件大小： 52K
代理商： SMMBD914LT1
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMBD914LT1/D
MMBD914LT1
Preferred Device
HighSpeed Switching
Diode
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR 5 Board (Note 1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
Range
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
V(BR)
100
Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
25
5.0
nAdc
mAdc
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
4.0
ns
1. FR 5 = 1.0
0.75 0.062 in.
2. Alumina = 0.4
0.3 0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
MMBD914LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
1
ANODE
3
CATHODE
Preferred devices are recommended choices for future use
and best overall value.
MMBD914LT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MMBD914LT3G
SOT23
(PbFree)
10,000/Tape & Reel
1
5D M
G
5D
= Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD914LT3
SOT23
10,000/Tape & Reel
2
1
3
相关PDF资料
PDF描述
SMP100LC-270 335 V, 24 A, SILICON SURGE PROTECTOR, DO-214AA
SMP100LC-35 55 V, 24 A, SILICON SURGE PROTECTOR, DO-214AA
SMP100LC-320 390 V, 24 A, SILICON SURGE PROTECTOR, DO-214AA
SMP100LC-360 450 V, 24 A, SILICON SURGE PROTECTOR, DO-214AA
SMP75-8 15 V, 14 A, SILICON SURGE PROTECTOR, DO-214AA
相关代理商/技术参数
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SMMBF4391LT1G 功能描述:JFET SS JFET NCH 30V TR RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
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