参数资料
型号: SMP11-E3/84A
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
封装: ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
文件页数: 1/4页
文件大小: 91K
代理商: SMP11-E3/84A
New Product
SMP11 thru SMP36A
Vishay General Semiconductor
Document Number: 88481
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Available in uni-directional
400 W peak pulse power capability with a
10/1000 s waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
VWM
11 V to 36 V
PPPM
400 W
IFSM
40 A
TJ max.
150 °C
DO-220AA (SMP)
eSMPTM Series
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
(3) Pulse test: 300 s pulse width, 1 % duty cycle
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (Fig. 1)
PPPM
400
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See table next page
A
Peak forward surge current 10 ms single half sine-wave (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A (3)
VF
2.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SMP26-E3/85A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP30-E3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP16A-E3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP18A-E3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP26A-E3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
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