参数资料
型号: SMP11-M3/85A
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
封装: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 1/5页
文件大小: 0K
代理商: SMP11-M3/85A
Document Number: 88481
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
56
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB Transient Voltage Suppressors
SMP3V3 thru SMP36A
Vishay General Semiconductor
New Product
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting on
ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
FEATURES
Very low profile - typical height of 1.0 mm
Ideal for automated placement
Available in uni-directional
400 W peak pulse power capability with a
10/1000 s waveform
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant
to
RoHS
Directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS
compliant,
and
commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(3) Pulse test: 300 s pulse width, 1 % duty cycle
PRIMARY CHARACTERISTICS
VWM
3.3 V to 36 V
PPPM
400 W
IFSM
40 A
TJ max.
150 °C
DO-220AA (SMP)
eSMP
Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (fig. 1) (1)(2)
PPPM
400
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See table next page
A
Peak forward surge current 10 ms single half sine-wave (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A (3)
VF
2.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SMP22-M3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP24-M3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP30-M3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
SMP11-M3/84A 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA
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