参数资料
| 型号： | SMS05CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY 5LINE 350W 6TSOP |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.2V |
| 功率（瓦特）： | 350W |
| 电极标记： | 5 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | SMS05CT1GOSDKR |
SMS05C, SMS12C, SMS15C, SMS24C
SMS05C ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
Symbol
V RWM
V BR
I R
V C
V C
I PP
C J
Conditions
(Note 2)
I T = 1.0 mA (Note 3)
V RWM = 5.0 V
I PP = 5.0 A (8
20 m s Waveform)
I PP = 24 A (8
20 m s Waveform)
8
20 m s Waveform
V R = 0 V, f = 1.0 MHz (Line to GND)
Min
6.2
Typ
260
Max
5.0
7.2
5.0
9.8
14.5
24
400
Unit
V
V
m A
V
V
A
pF
SMS12C ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
12
Unit
V
Breakdown Voltage
Reverse Leakage Current
V BR
I R
I T = 1.0 mA (Note 3)
V RWM = 12 V
13.3
0.001
15
1.0
V
m A
Clamping Voltage
Clamping Voltage
V C
V C
I PP = 5.0 A (8
I PP = 15 A (8
20 m s Waveform)
20 m s Waveform)
19
23
V
V
Maximum Peak Pulse Current
I PP
8
20 m s Waveform
15
A
Capacitance
C J
V R = 0 V, f = 1.0 MHz (Line to GND)
120
150
pF
SMS15C ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified) (See Note 4)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
15
Unit
V
Breakdown Voltage
Reverse Leakage Current
V BR
I R
I T = 1.0 mA (Note 3)
V RWM = 15 V
17
0.05
19
1.0
V
m A
Clamping Voltage
Clamping Voltage
V C
V C
I PP = 5.0 A (8
I PP = 12 A (8
20 m s Waveform)
20 m s Waveform)
24
29
V
V
Maximum Peak Pulse Current
I PP
8
20 m s Waveform
12
A
Capacitance
C J
V R = 0 V, f = 1.0 MHz (Line to GND)
95
125
pF
SMS24C ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
24
Unit
V
Breakdown Voltage
Reverse Leakage Current
V BR
I R
I T = 1.0 mA (Note 3)
V RWM = 24 V
26.7
0.001
32
1.0
V
m A
Clamping Voltage
Clamping Voltage
V C
V C
I PP = 5.0 A (8
I PP = 8 A (8
20 m s Waveform)
20 m s Waveform)
40
44
V
V
Maximum Peak Pulse Current
I PP
8
20 m s Waveform
8.0
A
Capacitance
C J
V R = 0 V, f = 1.0 MHz (Line to GND)
60
75
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Parametrics are the same for the Pb ? Free packages, which are suffixed with a “G’’.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMS05CTC | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:TVS Diode Array For ESD and Latch-Up Protection |
| SMS05CTG | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:TVS Diode Array For ESD and Latch-Up Protection |
| SMS05T1 | 功能描述:TVS二极管阵列 5V 350W TVS Quad RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| SMS05T1G | 功能描述:TVS二极管阵列 5V 350W TVS Quad Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| SMS05T1G | 制造商:ON Semiconductor 功能描述:TVS DIODE ARRAY 350W 5V SC-74 |
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