参数资料
型号: SMV1215-011LF
厂商: SKYWORKS SOLUTIONS INC
元件分类: 变容二极管
英文描述: 9.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
封装: GREEN PACKAGE-2
文件页数: 5/11页
文件大小: 857K
代理商: SMV1215-011LF
DATA SHEET SMV121x VARACTORS
Skyworks Solutions, Inc. Phone [781] 376-3000 Fax [781] 376-3100 sales@skyworksinc.com www.skyworksinc.com
200057L Skyworks Proprietary and Confidential information Products and Product Information are Subject to Change Without Notice April 25, 2011
3
Table 2. SMV121x Varactors Absolute Maximum Ratings
Parameter
Symbol
Minimum
Typical
Maximum
Units
Reverse voltage
VR
12
V
Forward current
IF
20
mA
Power dissipation
PDIS
250
mW
Operating temperature
TOP
–55
+125
°C
Storage temperature
TSTG
–55
+150
°C
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times. The
SMV121x varactors are Class 0 Human Body Model (HBM) ESD devices.
Table 3. SMV121x Varactors Electrical Specifications (Note 1)
(TOP = 25 °C, Unless Otherwise Noted)
Part
Number
CT @ 1 V
(pF)
CT @ 2.5 V
(pF)
CT @ 4 V
(pF)
CT @ 1 V
CT @ 2.5 V
(Ratio)
CT @ 1 V
CT @ 4 V
(Ratio)
RS @ 4 V,
500 MHz
(
Ω)
Min.
Typ.
Min.
Max.
Typ.
Max.
Typ.
SMV1211
95.0
100.0
40.0
65.0
20
25.0
2
5
0.4
SMV1212
42.0
50.0
18.0
27.0
9
12.0
2
5
0.8
SMV1213
17.0
22.0
8.5
10.5
4
5.5
2
5
1.4
SMV1214
14.5
16.0
6.5
7.8
3
4.8
2
5
1.7
SMV1215
8.7
9.5
4.3
5.5
2
2.9
2
5
2.8
Note 1: Performance is guaranteed only under the conditions listed in this Table.
Reverse voltage VR (IR = 10
μA) = 12 V minimum
Reverse current IR (VR = 8 V) = 20 nA maximum
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