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参数资料
| 型号： | SMV2021-202 |
| 元件分类： | 变容二极管 |
| 英文描述： | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 45K |
| 代理商： | SMV2021-202 |
2–10
Alpha Industries
[617] 9355150 Fax [617] 8244579 E-mail sales@alphaind.com Visit our web site: www.alphaind.com
Features
Octave Frequency Tuning from 0 to 10 Volts
Good Linearity Tuning Ratio Without
Compensation Network
Offered in Package Styles Suitable for a Wide
Range of Applications
Alpha microwave hyperabrupt diodes are designed
for wideband tuning of microwave filters, resonators,
and local oscillators. Linear tuning, not possible with
conventional
abrupt–junction
tuning
diodes,
is
accomplished by maintaining an accurate silicon
doping profile using ion–implantation precision
control techniques.
This series of hyperabrupt diodes offer wide
bandwidth tuning with low bias voltage. For example,
a 22 volt hyperabrupt diode can provide the same
tuning variation as a 90 volt abrupt–junction diode.
Description
When capacitance and tuning ratio values are equal,
a hyperabrupt diode will have a Q (measured at –4
volts, 50 MHz) approximately 1/2 to 1/3 that of an
abrupt–junction diode.
These diodes are available in many Alpha ceramic
packages. They can be supplied in chip form or
mounted on a variety of packages. All chips are
passivated with silicon dioxide for reliability and low
leakage current.
The specifications table indicates chip capacitance
measured at 1 MHz. For packaged varactors add
appropriate package capacitance, e.g., 0.22 pF for
package 210, to obtain total capacitance.
Maximum Ratings
Reverse Voltage, VR:
Forward Current, IF:
Power Dissipation at 25
°C:
Operating Temperature:
Storage Temperature:
22V
100 mA
250 mW
–55 to 150
°C
–65 to 200
°C
Electrical Specifications at 25
°C
Square Passivated Silicon Chips
Part
Number
VB
@ 10
A
(V)
IR
@ 17.6V
(nA)
CJ
@ 4V
(pF)
CJ
@ 20V
(pF)
Q
@ 4V
50 MHz
Chip
Outline
N mber
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Number
" SMV2019–000
22
50
0.68
0.88
0.13
0.23
500
149–801
SMV2020–000
22
50
1.13
1.43
0.23
0.33
500
149–801
SMV2021–000
22
50
1.58
1.98
0.32
0.44
500
149–801
SMV2022–000
22
50
2.48
3.08
0.48
0.68
400
149–801
" SMV2023–000
22
50
4.28
5.28
0.78
1.08
400
149–801
" Available through distribution.
Silicon Low Capacitance
Hyperabrupt Junction Varactor Diodes
SMV2019 to SMV2023
相关PDF资料 |
PDF描述 |
|---|---|
| SMV2021-230 | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV2020-240 | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV2019-240 | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV2020-203 | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| SMV2020-210 | 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMV2021-203 | 制造商:Skyworks Solutions Inc 功能描述:RF VARACTOR TUNING DIODE |
| SMV2021-210 | 功能描述:变容二极管 Cj@0V 4.5pF Q@ 4V, 50MHz 500 RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| SMV2021-219 | 功能描述:变容二极管 Cj@0V 4.5pF Q@ 4V, 50MHz 500 RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| SMV2021-240 | 功能描述:变容二极管 Cj@0V 4.5pF Q@ 4V, 50MHz 500 RoHS:否 制造商:Skyworks Solutions, Inc. 电容:5.2 pF 反向电压:10 V 正向连续电流:20 mA 端接类型:SMD/SMT 封装 / 箱体:SC-79 封装:Reel |
| SMV2022 | 制造商:SKYWORKS 制造商全称:SKYWORKS 功能描述:Silicon Hyperabrupt Junction Varactors, Packaged and Bondable Planar Chips |
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