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参数资料
| 型号： | SMZJ3800B/5 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 30 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 文件页数： | 1/2页 |
| 文件大小： | 47K |
| 代理商： | SMZJ3800B/5 |
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
SMZJ3789 thru SMZJ3809B
Surface Mount Zener Diodes
Zener Voltage 10 to 68V
Steady State Power 1.5W
Dimensions in inches and (millimeters)
DO-214AA (SMBJ-Bend)
6/28/00
Features
Plastic package has Underwriters Laboratory
Flammability Classificaion 94V-0
For surface mounted applications
Glass passivated chip junction
Low Zener impedance
Low regulation factor
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Contact local sales office for gull-wing
(SMZG prefix) lead form (DO-215AA)
Mechanical Data
Case: JEDEC DO-214 molded plastic over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Band denotes cathode
Mounting Position: Any
Weight: 0.003oz., 0.093g
Packaging codes/options:
5/3.2K per 13” Reel (12mm tape)
2/750 ea per 7” Reel (12mm tape)
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Maximum Electrical Characteristics Operating Junction and Storage Temperature Range: TJ, TSTG: –55°C to +150°C
Device
Nominal Zener
Test
Max. Zener Impedance
Max. Reverse
Max. Zener
Part Number
Marking
Voltage
Current
Leakage Current
Current
Modified J-Bend
Code
VZ at IZT
IZT
ZZT at IZT
ZZK at IZK
IR at VR
IZM
(V)
(mA)
(
)()(mA)
(
A)
(V)
(mA)
SMZJ3789A,B
WA,B
10
37.5
5.0
1000
0.25
50.0
7.6
125
SMZJ3790A,B
WC,D
11
34.1
6.0
650
0.25
10.0
8.4
115
SMZJ3791A,B
WE,F
12
31.2
7.0
550
0.25
5.0
9.1
105
SMZJ3792A,B
WG,H
13
28.8
7.5
550
0.25
5.0
9.9
98
SMZJ3793A,B
WI,J
15
25.0
9.0
600
0.25
5.0
11.4
85
SMZJ3794A,B
WK,L
16
23.4
10.0
600
0.25
5.0
12.2
80
SMZJ3795A,B
XA,B
18
20.8
12.0
650
0.25
5.0
13.7
70
SMZJ3796A,B
XC,D
20
18.7
14.0
650
0.25
5.0
15.2
62
SMZJ3797A,B
XE,F
22
17.0
17.5
650
0.25
5.0
16.7
56
SMZJ3798A,B
XG,H
24
15.6
19.0
700
0.25
5.0
18.2
51
SMZJ3799A,B
XI,J
27
13.9
23.0
700
0.25
5.0
20.6
46
Notes: (1) Standard voltage tolerance is ±20%, suffix “A” denotes ±10% and suffix “B” denotes ±5%
(2) Maximum steady state power dissipation is 1.5W at TL = 75°C (See Fig. 1)
Mounting Pad Layout
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMZJ3800B-E3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount Power Voltage-Regulating Diodes |
| SMZJ3800B-E3/51 | 功能描述:稳压二极管 30 Volt 1.5W 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SMZJ3800B-E3/52 | 功能描述:稳压二极管 30 Volt 1.5W 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SMZJ3800B-E3/55 | 功能描述:稳压二极管 30 Volt 1.5W 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
| SMZJ3800B-E3/5B | 功能描述:稳压二极管 30 Volt 1.5W 5% RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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