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参数资料
| 型号： | SP1N5811CB |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, E, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 207K |
| 代理商： | SP1N5811CB |
VOIDLESS-HERMETICALLY-SEALED
ULTRAFAST RECOVERY GLASS
RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5807CB thru 1N5811CB
1N5807CB–1N5811CB
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL FORWARD CURRENT
TYPICAL REVERSE CURRENT vs. VOLTAGE
vs. FORWARD VOLTAGE
FIGURE 3
FIGURE 4
OUTPUT CURRENT vs LEAD TEMPERATURE
FORWARD PULSE CURRENT vs. DURATION
Microsemi
Scottsdale Division
Page 2
Copyright
2007
7-26-2007
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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