参数资料
型号: SP3003-04JTG
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: UNIDIRECTIONAL, SILICON, TVS DIODE, MO-203AB
封装: GREEN, PLASTIC, SC-70, MO-203, 6 PIN
文件页数: 2/6页
文件大小: 1352K
代理商: SP3003-04JTG
2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com/SPA for current information.
96
TVS Diode Arrays (SPAFamily of Products)
Revision: June 14, 2011
SP3003 Series
Low Capacitance ESD Protection - SP3003 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
PP
Peak Current (t
p=8/20μs)
2.5
A
T
OP
Operating Temperature
-40 to 85
°C
T
STOR
Storage Temperature
-50 to 150
°C
Thermal Information
Parameter
Rating
Units
Storage Temperature Range
-65 to 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature
(Soldering 20-40s)
260
°C
Electrical Characteristics (T
OP=25C)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
V
RWM
I
R ≤ 1A
6
V
Reverse Leakage Current
I
LEAK
V
R=5V
0.5
A
Clamp Voltage1
V
C
I
PP=1A, tp=8/20s, Fwd
10.0
12.0
V
I
PP=2A, tp=8/20s, Fwd
11.8
15.0
V
ESD Withstand Voltage1
V
ESD
IEC61000-4-2 (Contact)
±8
kV
IEC61000-4-2 (Air)
±15
kV
Diode Capacitance1
C
I/O-GND
Reverse Bias=0V
0.7
0.8
0.95
pF
Reverse Bias=1.65V
0.55
0.65
0.8
pF
Diode Capacitance1
C
I/O-I/O
Reverse Bias=0V
0.35
pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Bias Voltage
Insertion Loss (S21) I/O to GND
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
Frequency [Hz]
Inser
tion
Loss
[dB]
1.00
0.95
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
0.50
I/O
Capacitance
(pF)
I/O DC Bias (V)
V
CC = 3.3V
V
CC = Float
V
CC = 5V
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