参数资料
型号: SP3220UET
英文描述: 320 x 240 pixel format, Chip-On-Glass Technology
中文描述: 高速3.0V至5.5V的RS - 232驱动器/接收器
文件页数: 2/18页
文件大小: 115K
代理商: SP3220UET
Rev. 7/8/03 SP3220B/U +3.0 to +5.0V RS-232 Transceivers
Copyright 2003 Sipex Corporation
2
NOTE 1:
V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability and cause permanent damage to the
device.
V
.............................................................-0.3V to +6.0V
V+ (NOTE 1)..............................................-0.3V to +7.0V
V- (NOTE 1).............................................+0.3V to -7.0V
V+ + |V-| (NOTE 1)...................................................+13V
I
CC
(DC V
CC
or GND current)..........................+100mA
Input Voltages
TxIN, EN .............................................. -0.3V to +6.0V
RxIN ................................................................... +25V
Output Voltages
TxOUT ............................................................. +13.2V
RxOUT .........................................-0.3V to (V
CC
+0.3V)
Short-Circuit Duration
TxOUT ...................................................... Continuous
Storage Temperature ....................... -65
°
C to +150
°
C
Power Dissipation Per Package
16-pin SSOP (derate 9.69mW/
o
Cabove+70
o
C) ........ 775mW
16-pin TSSOP (derate 10.5mW/
o
C above +70
o
C)..... 840mW
16-pin Wide SOIC (derate 11.2mW/
o
C above+70
o
C) 900mW
SPECIFICATIONS
Unless otherwise noted, the following specifications apply for V
= +3.0V to +5.0V with T
AMB
= T
MIN
to T
MAX
.
Typical Values apply at V
CC
= +3.3V or +5.0V and T
AMB
= 25
o
C, C1-4=0.1
μ
F.
R
E
T
E
M
A
R
A
P
.
N
I
M
.
P
Y
T
.
X
A
M
S
T
N
U
S
N
O
I
D
N
O
C
S
C
I
S
I
R
E
T
C
A
R
A
H
C
C
D
t
e
C
y
p
u
S
3
0
A
m
T
N
,
a
=
o
N
o
I
T
n
B
M
D
A
5
2
+
V
=
o
V
,
C
C
C
V
3
=
r
G
C
C
t
e
C
y
p
u
S
n
w
o
d
h
S
0
0
1
μ
A
,
D
N
r
G
V
=
0
N
=
D
N
H
I
T
S
T
B
M
A
5
2
+
=
o
V
,
C
C
C
V
3
+
=
V
C
C
S
T
U
P
T
U
O
R
E
V
I
E
C
E
R
D
N
A
S
T
U
P
N
I
C
I
G
O
L
W
O
L
d
h
s
e
T
c
o
L
t
p
n
8
V
2
e
N
,
N
D
H
S
,
N
E
,
N
I
T
H
G
I
H
d
h
s
e
T
c
o
L
t
p
n
0
V
V
C
C
r
2
e
N
,
V
3
=
2
e
N
,
V
0
t
e
C
e
g
a
k
a
e
L
t
p
n
1
0
±
0
±
μ
A
,
=
N
D
V
H
C
S
o
,
5
N
2
+
E
,
=
N
I
T
T
A
e
R
B
v
c
M
N
I
V
o
V
0
C
0
C
t
e
C
e
g
a
k
a
e
L
t
p
O
5
0
±
0
1
±
μ
A
V
d
e
a
s
D
s
T
U
O
V
o
V
=
C
C
W
O
L
e
g
a
V
t
p
O
4
V
I
T
U
O
A
m
6
=
H
G
I
H
e
g
a
V
t
p
O
V
C
C
6
V
C
C
1
V
I
T
U
O
A
m
0
=
S
T
U
P
T
U
O
R
E
V
I
R
D
g
n
w
S
e
g
a
V
t
p
O
0
±
4
±
V
k
3
T
A
V
C
V
O
V
O
,
p
o
r
v
l
t
d
n
u
o
o
C
o
5
2
d
a
+
o
=
B
M
e
c
n
a
e
R
t
p
O
0
0
3
C
T
,
V
0
=
-
V
=
+
V
=
T
U
O
= + V
2
t
e
C
t
c
C
-
h
S
t
p
O
5
3
±
0
6
±
A
m
T
U
V
0
=
t
e
C
e
g
a
k
a
e
L
t
p
O
5
2
±
μ
A
T
U
= +
V
,
V
2
1
C
C
d
e
a
s
s
v
V
5
o
V
0
=
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