参数资料
型号: SP3232ECN-L
厂商: Exar Corporation
文件页数: 2/23页
文件大小: 0K
描述: IC TXRX RS232 ESD TRUE 16NSOIC
标准包装: 49
类型: 收发器
驱动器/接收器数: 2/2
规程: RS232
电源电压: 3 V ~ 5.5 V
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
其它名称: 1016-1102-5
10
Exar Corporation 48720 Kato Road, Fremont CA, 94538 510-668-7017 www.exar.com
SP3222E/SP3232E_101_031413
In most circumstances, decoupling the
power supply can be achieved adequately
using a 0.1F bypass capacitor at C5 (refer
to figures 6 and 7). In applications that are
sensitive to power-supply noise, decouple
Vcc to ground with a capacitor of the same
value as charge-pump capacitor C1. Physi-
cally connect bypass capcitors as close to
the IC as possible.
The charge pump operates in a discontinu-
ous mode using an internal oscillator. If the
output voltages are less than a magnitude
of 5.5V, the charge pump is enabled. If the
outputvoltages exceedamagnitudeof5.5V,
the charge pump is disabled. This oscillator
controls the four phases of the voltage shift-
ing. A description of each phase follows.
Phase 1
— V
SS charge storage — During this phase
of the clock cycle, the positive side of capaci-
tors C
1 and C2 are initially charged to VCC.
C
l
+
is then switched to GND and the charge
in C
1
is transferred to C
2
. Since C
2
+
is con-
nected to V
CC, the voltage potential across
capacitor C
2 is now 2 times VCC.
Phase 2
— V
SS transfer — Phase two of the clock
connectsthenegativeterminalofC
2 to the VSS
storagecapacitorandthepositiveterminalof
C
2 to GND. This transfers a negative gener-
ated voltage to C
3. This generated voltage is
regulated to a minimum voltage of -5.5V.
Simultaneous with the transfer of the volt-
age to C
3, the positive side of capacitor C1
is switched to V
CC and the negative side is
connected to GND.
Phase 3
— V
DD charge storage — The third phase of
the clock is identical to the first phase — the
charge transferred in C
1 produces –VCC in
the negative terminal of C
1, which is applied
to the negative side of capacitor C
2. Since
C
2
+
is at V
CC, the voltage potential across C2
is 2 times V
CC.
Phase 4
— V
DD transfer — The fourth phase of
the clock connects the negative terminal
of C
2 to GND, and transfers this positive
generated voltage across C
2 to C4, the
V
DD storage capacitor.
This voltage is
regulated to +5.5V. At this voltage, the in-
ternal oscillator is disabled. Simultaneous
with the transfer of the voltage to C
4, the
positive side of capacitor C
1 is switched
to V
CC and
the
negative side is con-
nected to GND, allowing the charge
pump cycle to begin again. The charge
pump cycle will continue as long as the
operational conditions for the internal
oscillator are present.
Since both V+ and Vare separately gener-
ated from V
CC, in a no–load condition V
+
and Vwill be symmetrical. Older charge
pump approaches that generate Vfrom
V+ will show a decrease in the magnitude
of Vcompared to V+ due to the inherent
inefficiencies in the design.
The clock rate for the charge pump typically
operates at greater than 250kHz. The exter-
nal capacitors can be as low as 0.1F with
a 16V breakdown voltage rating.
DESCRIPTION
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