参数资料
型号: SP3243EUER-L/TR
厂商: Exar Corporation
文件页数: 2/24页
文件大小: 0K
描述: IC TXRX RS232 INTELLIGENT 32QFN
标准包装: 3,000
类型: 收发器
驱动器/接收器数: 3/5
规程: RS232
电源电压: 3 V ~ 5.5 V
安装类型: 表面贴装
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN 裸露焊盘(5x5)
包装: 带卷 (TR)
10
Exar Corporation 48720 Kato Road, Fremont CA, 94538 510-668-7017 www.exar.com
SP3243E_102_060611
Charge Pump
The charge pump is a Exar–patented design
(U.S. 5,306,954) and uses a unique approach
compared to older less–efficient designs.
The charge pump still requires four external
capacitors, but uses a four–phase voltage
shifting technique to attain symmetrical 5.5V
power supplies. The internal power supply
consists of a regulated dual charge pump that
provides output voltages 5.5V regardless of
the input voltage (V
CC) over the +3.0V to +5.5V
range. This is important to maintain compli-
ant RS-232 levels regardless of power supply
fluctuations.
The charge pump operates in a discontinuous
mode using an internal oscillator. If the output
voltages are less than a magnitude of 5.5V, the
charge pump is enabled. If the output voltages
exceed a magnitude of 5.5V, the charge pump
is disabled. This oscillator controls the four
phases of the voltage shifting. A description of
each phase follows.
Phase 1
— V
SS charge storage — During this phase of the
clock cycle, the positive side of capacitors C
1 and
C
2 are initially charged to VCC. Cl
+
is then switched
to GND and the charge in C
1
is transferred to C
2
.
SinceC
2
+
isconnectedtoV
CC, the voltage potential
across capacitor C
2 is now 2 times VCC.
Phase 2
— V
SS transfer — Phase two of the clock
connects the negative terminal of C
2 to the VSS
storage capacitor and the positive terminal of
C
2 to GND.
This transfers a negative gener-
ated voltage to C
3. This generated voltage is
regulated to a minimum voltage of -5.5V.
SimultaneouswiththetransferofthevoltagetoC
3,
the positive side of capacitor C
1 is switched to VCC
and the negative side is connected to GND.
Phase 3
— V
DD charge storage — The third phase of the
clock is identical to the first phase — the charge
transferred in C
1 produces –VCC in the negative
terminal of C
1, which is applied to the negative
side of capacitor C
2. Since C2
+
is at V
CC, the volt-
age potential across C
2 is 2 times VCC.
Phase 4
— V
DD transfer — The fourth phase of the clock
connects the negative terminal of C
2 to GND,
and transfers this positive generated voltage
across C
2 to C4, the VDD storage capacitor. This
voltage is regulated to +5.5V. At this voltage,
the internal oscillator is disabled. Simultane-
ous with the transfer of the voltage to C
4, the
positive side of capacitor C
1 is switched to VCC
and the negative side is connected to GND, al-
lowing the charge pump cycle to begin again.
The charge pump cycle will continue as long
as the operational conditions for the internal
oscillator are present.
Since both V+ and Vare separately generated
from V
CC, in a no–load condition V
+
and Vwill
be symmetrical. Older charge pump approaches
that generate Vfrom V+ will show a decrease in
the magnitude of Vcompared to V+ due to the
inherent inefficiencies in the design. The clock
rate for the charge pump typically operates at
greater than 250kHz. The external capacitors
can be as low as 0.1F with a 16V breakdown
voltage rating.
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