参数资料
型号: SP331CT-L
厂商: Exar Corporation
文件页数: 13/13页
文件大小: 0K
描述: IC TXRX RS232/485 PROG 28WSOIC
标准包装: 27
类型: 收发器
驱动器/接收器数: 4/4
规程: RS232,RS485
电源电压: 5V
安装类型: 表面贴装
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
供应商设备封装: 28-SOIC W
包装: 管件
其它名称: 1016-1133-5
9
Exar Corporation 48720 Kato Road, Fremont CA, 94538 50-668-707 www.exar.com
SP33_00_0260
to ground and transfers the generated l0V
across C
2 to C4, the VDD storage capacitor.
Again, simultaneously with this, the positive
side of capacitor C
is switched to +5V and
the negative side is connected to ground,
and the cycle begins again.
Since both V+ and Vare separately gen-
erated from V
CC in a no–load condition, V+
and Vwill be symmetrical. Older charge
pump approaches that generate Vfrom
V+ will show a decrease in the magnitude
of Vcompared to V+ due to the inherent
inefficiencies in the design.
The clock rate for the charge pump typically
operates at 5kHz. The external capaci-
tors must be 0.F with a 6V breakdown
rating.
External Power Supplies
For applications that do not require +5V only,
external supplies can be applied at the V+
and Vpins. The value of the external sup-
ply voltages must be no greater than ±l0V.
The current drain for the ±0V supplies is
used for RS-232. For the RS-232 driver the
current requirement will be 3.5mAper driver.
The external power supplies should provide
a power supply sequence of :+l0V, then +5V,
followed by –l0V.
VCC = +5V
–5V
+5V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
–10V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
–5V
+5V
–5V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
VCC = +5V
+10V
VSS Storage Capacitor
VDD Storage Capacitor
C1
C2
C3
C4
+
Figure . Charge Pump Phase .
Figure 2. Charge Pump Phase 2.
Figure 3. Charge Pump Phase 3.
Figure 4. Charge Pump Phase 4.
+10V
GND
-10V
a) C2+
b) C2-
Figure 5. Charge Pump Waveforms
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