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参数资料
| 型号： | SP5770A |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | SILICON, SIGNAL DIODE |
| 封装： | CERAMIC, FLAT PACK-10 |
| 文件页数： | 1/2页 |
| 文件大小： | 58K |
| 代理商： | SP5770A |
Isolated Diode Array with
HiRel MQ, MX, MV, and SP Screening Options
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
3-27-2007
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
5770A
DESCRIPTION
APPEARANCE
These low capacitance diode arrays with common anode are multiple, discrete, isolated
junctions fabricated by a planar process and mounted in a 10-PIN package for use as
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing
them to ground (see figure 1). This circuit application is further complimented by the
1N5768 (separate data sheet) that has a common cathode. An external TVS diode may
be added between the positive supply line and ground to prevent overvoltage on the
supply rail. They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-film
memories, plated-wire memories, etc., as well as decoding or encoding applications.
These arrays offer many advantages of integrated circuits such as high-density
packaging and improved reliability. This is a result of fewer pick and place operations,
smaller footprint, smaller weight, and elimination of various discrete packages that may
not be as user friendly in PC board mounting.
10-PIN Ceramic
Flat Pack
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Hermetic Ceramic Package
Isolated Diodes To Eliminate Cross-Talk Voltages
High Breakdown Voltage VBR > 60 V at 10 μA
Low Leakage IR< 100nA at 40 V
Low Capacitance C < 8.0 pF
Options for screening in accordance with MIL-PRF-
19500/474 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or SP prefixes
respectively to part numbers. For example, designate
MX5770A for a JANTX screen.
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I/O Ports
LAN
Switching Core Drivers
IEC 61000-4 Compatible (see circuit in figure 1)
61000-4-2 ESD : Air 15kV, contact 8kW
61000-4-4 (EFT) : 40A – 5/50 ns
61000-4-5 (surge): 12A 8/20
μs
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)
IO Continuous Forward Current 300 mA (Notes 1 & 3)
IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)
400 mW Power Dissipation per Junction @ 25
oC
500 mW Power Dissipation per Package @ 25
oC (Note 4)
Operating Junction Temperature range –65 to +150
oC
Storage Temperature range of –65 to +150
oC
10-PIN Ceramic Flat Pack
Weight 0.25 grams (approximate)
Marking: Logo, part number, date code and dot
identifying pin #1
Carrier Tubes; 19 pcs (standard)
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%
NOTE 3: Derate at 2.4 mA/
oC above +25oC
NOTE 4: Derate at 4.0 mW/
oC above +25oC
MAXIMUM
FORWARD
VOLTAGE
VF1
IF = 100 mA
(Note 1)
MAXIMUM
REVERSE
CURRENT
IR1
VR = 40 V
MAXIMUM
CAPACITANCE
(PIN TO PIN)
Ct
VR = 0 V
F = 1 MHz
MAXIMUM
FORWARD
RECOVERY TIME
tfr
IF = 500 mA
MAXIMUM
REVERSE
RECOVERY TIME
trr
IF = IR = 200 mA
irr = 20 mA
RL = 100 ohms
PART
NUMBER
Vdc
μAdc
pF
ns
5770A
1
0.1
8.0
40
20
NOTE 1: Pulsed: PW = 300 s +/- 50 s, duty cycle <2%, 90 s after leading edge.
相关PDF资料 |
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| SP6316 | 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| JANTX1N4623(DO35) | 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| JAN1N4624(DO35) | 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| JANTXV1N4624(DO35) | 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| JAN1N4623(DO35) | 4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
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