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参数资料
| 型号： | SP6507A |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, CERAMIC, DIP-16 |
| 文件页数： | 2/2页 |
| 文件大小： | 60K |
| 代理商： | SP6507A |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208S series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
2.0
K/W
junction to mounting base
half cycle
-
2.4
K/W
R
th j-a
Thermal resistance
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA208S-
...D
...E
...F
I
GT
Gate trigger current
2
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
10
25
mA
T2+ G-
-
5
10
25
mA
T2- G-
-
5
10
25
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
15
25
30
mA
T2+ G-
-
25
30
40
mA
T2- G-
-
25
30
40
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
15
25
30
mA
V
T
On-state voltage
I
T = 10 A
-
1.65
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
1.5
V
D = 400 V; IT = 0.1 A;
0.25
-
V
T
j = 125 C
I
D
Off-state leakage current
V
D = VDRM(max); Tj = 125 C
-
0.5
mA
DYNAMIC CHARACTERISTICS
T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BTA208S-
...D
...E
...F
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max);20
60
70
-
V/
s
off-state voltage
T
j = 110 C; exponential
waveform; gate open
circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
2
5
14
-
A/ms
commutating current
I
T(RMS) = 8 A;
dV
com/dt = 10V/s; gate
open circuit
dI
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 125 C;
6
10
20
-
A/ms
commutating current
I
T(RMS) = 8 A;
dV
com/dt = 0.1V/s; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
March 2002
2
Rev 2.000
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