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参数资料
| 型号： | SP6669EB |
| 厂商： | Exar Corporation |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR SP6669 |
| 标准包装： | 1 |
| 系列： | * |
| 工具箱： | 1016-1749-ND - LOW POWER DESIGN KIT 732-3616-ND - LOW POWER DESIGN KIT |
S P 6 6 6 9
6 0 0 m A 1 . 5 M H z S y n c h r o n o u s S t e p D o w n C o n v e r t e r
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of
the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect
reliability.
Input Voltage V IN ....................................... -0.3V to 6.0V
Enable V FB Voltage ....................................... -0.3V to V IN
OPERATING RATINGS
Input Voltage Range V IN ............................... 2.7V to 5.5V
Operating Temperature Range ................... -40°C to 85°C
Thermal Resistance θ JA .....................................250°C/W
Thermal Resistance θ Jc ....................................... 90°C/W
Note 1: T J is a function of the ambient temperature T A and
power dissipation P D (T J = T A + P D x 250°C/W).
SW Voltage ...................................... -0.3V to (V IN +0.3V)
PMOS Switch Source Current (DC) ........................ 800mA
NMOS Switch Sink Current .................................. 800mA
Peak Switch Sink/Source Current ............................ 1.3A
Operating Junction Temperature 1 .......................... 125°C
Storage Temperature .............................. -65°C to 150°C
Lead Temperature (Soldering, 10 sec).................... 260°C
ESD Rating (HBM - Human Body Model) .................... 2kV
ESD Rating (MM - Machine Model) ........................... 200V
ELECTRICAL SPECIFICATIONS
Specifications with standard type are for an Operating Junction Temperature of T J = 25°C only; limits applying over the full
Operating Junction Temperature range are denoted by a “?”. Minimum and Maximum limits are guaranteed through test,
design, or statistical correlation. Typical values represent the most likely parametric norm at T A = 25°C, and are provided
for reference purposes only. Unless otherwise indicated, V IN = 3.6V.
Parameter
Min.
Typ.
Max.
Units
Conditions
Feedback Current I VFB
±30
nA
Regulated Feedback Voltage V FB
Reference Voltage Line
Regulation ΔV FB
Output Voltage Accuracy ΔV OUT %
Output Over-Voltage Lockout
ΔV OVL
Output Voltage Line Regulation
ΔV OUT
Peak Inductor Current I PK
0.588
-3
20
2.5
0.600
50
7.8
1.0
0.612
0.4
+3
80
13
0.4
V
%/V
%
mV
%
%/V
A
?
?
?
T A =25°C
V IN =2.5V to 5.5V
ΔV OVL = V OVL – V FB (Adj.)
ΔV OVL = V OVL – V OUT (Fixed)
V IN =2.5V to 5.5V
V IN =3V, V FB =0.5V or V OUT =90%, Duty
cycle <35%
Output Voltage Load Regulation
V LOADREG
0.5
%
Quiescent Current 2 I Q
Shutdown Current I SHTDWN
200
0.1
340
1
μA
μA
V FB =0.5V or V OUT =90%
V EN =0V, V IN =4.2V
Oscillator Frequency f OSC
RDS(ON) of PMOS R PFET
RDS(ON) of NMOS R NFET
1.2
1.5
290
0.45
0.40
1.8
0.55
0.50
MHz
Hz
Ω
Ω
?
?
V FB =0.6V or V OUT =100%
V FB =0V or V OUT =0V
I SW =100mA
I SW =100mA
SW Leakage I LSW
Enable Threshold V EN
Shutdown Threshold V EN
EN Leakage Current I EN
0.4
±1
1.2
±1
μA
V
V
μA
?
?
?
V EN =0V, V SW =0V or 5V, V IN =5V
Note 1: The Switch Current Limit is related to the Duty Cycle. Please refer to figure 15 for details.
Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency.
? 2012 Exar Corporation
2/11
Rev. 2.2.0
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