参数资料
型号: SPB07N60C3
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 6/14页
文件大小: 159K
代理商: SPB07N60C3
2002-08-12
Page 6
SPP07N60C2, SPB07N60C2
SPA07N60C2
Final data
5 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
=
f
(
t
p
)
parameter:
D
=
t
p
/
t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
5
10
15
A
25
I
D
7V
8V
9V
10V
12V
20V
8 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=150°C
parameter:
t
p
= 10 μs,
V
GS
0
5
10
15
V
25
V
DS
0
2
4
6
8
A
12
I
D
6V
6.5V
7V
7.5V
8V
8.5V
9V
20V
12V
10V
相关PDF资料
PDF描述
SPB07N60S5 Cool MOS⑩ Power Transistor
SPA07N60C2 Cool MOS⑩ Power Transistor
SPA07N60C3 Cool MOS⑩ Power Transistor
SPP07N60C2 Cool MOS⑩ Power Transistor
SPP07N60C3 Cool MOS⑩ Power Transistor
相关代理商/技术参数
参数描述
SPB07N60C3_05 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
SPB07N60C3ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 7.3A D2PAK
SPB07N60S5 功能描述:MOSFET COOL MOS N-CH 600V 7.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SPB07N60S5_05 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS Power Transistor
SPB07N60S5ATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 7.3A TO-263