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参数资料
| 型号： | SPB10090 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | 整流器 |
| 英文描述： | 100 A, 90 V, SILICON, RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT PACKAGE-4 |
| 文件页数： | 1/2页 |
| 文件大小： | 115K |
| 代理商： | SPB10090 |
ROHS Compliant
2500 VDC
3000 pF
*Pulse test: Pulse width 300sec, Duty cycle 2%
3 mA
0.92 Volts
1600 Amps
200 Amps
100 Amps
Electrical Characteristics
2 Amps
2 X 100A Schottky Barrier Rectifier
SPB10080 - SPB100100
Thermal and Mechanical Characteristics
Typical junction capacitance per leg
Max peak reverse current per leg
Maximum repetitive reverse current per leg
Max peak forward voltage per leg
Maximum surge current per leg
Average forward current per package
Average forward current per leg
Mounting Torque
Weight
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Storage temp range
ISOL
T
R
T
JC
0
J
0
STG
CJ
F(AV)
I
R(OV)
FSM
VFM
I
V
RM
I
F(AV)
I
100V
90V
80V
Reverse Voltage
Working Peak
Catalog Number
SPB100100
SPB10090
SPB10080
Microsemi
Repetitive Peak
Reverse Voltage
100V
90V
80V
C = 123°C
1.1 ounces (30 grams) typical
9-13 inch pounds
f = 1 KHz, 25°C, 1sec square wave
R = 5.0V, J = 25°C
any terminal to base
FM = 100A: J = 25°C*
8.3ms, half sine, J = 175°C
C = 123°C
RRM, J = 25°C*
-55°C to 175°C
0.50°C/W
-55°C to 175°C
0.25°C/W
V
T
I
V
T
Low Forward Voltage Drop
2500V isolation - Terminals to Base
2 Schottky Rectifiers in one pkg.
80-100V @ 100A/leg
Low Switching losses
Minimum Maximum Minimum Maximum Notes
25.04
24.79
0.976
B
0.986
0.480
0.174
1.059
1.000
E
F
D
C
0.472
0.164
1.049
0.990
12.00
26.67
4.16
25.15
12.24
4.42
26.90
25.40
1.504
Dim. Inches
A
1.494
Millimeter
37.95
38.20
Part Number
DSS2x61-01A
Industry
STPS80H100TV
F
G
H
A
B
E
0.084
G
0.080
2.03
2.13
H
0.372
0.378
9.45
9.60
SOT-227
D
C
STPS160H100TV
January, 2010 - Rev. 2
www.microsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPB100N032L-03 | 制造商:Rochester Electronics LLC 功能描述: |
| SPB100N03S2-03 | 功能描述:MOSFET N-CH 30V 100A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| SPB100N03S2-03 G | 功能描述:MOSFET TRAN MOSFET N-CH 30V 100A 3-PIN TO-263 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB100N03S2-03G | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor |
| SPB100N03S203T | 功能描述:MOSFET N-CH 30V 100A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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