- 您现在的位置：买卖IC网 > PDF目录374886 > SPB11N60S5 (SIEMENS A G) OptiMOS Power-Transistor( MOS 型功率晶体管) PDF资料下载
参数资料
| 型号： | SPB11N60S5 |
| 厂商： | SIEMENS A G |
| 元件分类： | JFETs |
| 英文描述： | OptiMOS Power-Transistor( MOS 型功率晶体管) |
| 中文描述： | 11 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 116K |
| 代理商： | SPB11N60S5 |
1
2000-01-27
SPP11N60S5
SPB11N60S5
Cool MOS
Power-Transistor
·
New revolutionary high voltage technology
·
Ultra low gate charge
·
Periodic avalanche rated
·
Extreme dvdt rated
·
Optimized capacitances
·
Improved noise immunity
·
Former development designation:
SPPx2N60S5/SPBx2N60S5
G,1
D,2
S,3
C
O L
MOS
Type
SPP11N60S5 600 V 11 A
SPB11N60S5
V
DS
I
D
R
DS(on)
0.38
W
Package
P-TO220-3-1
P-TO263-3-2
Marking
11N60S5
11N60S5
Ordering Code
Q67040-S4198
Q67040-S4199
Maximum Ratings
, at T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
Pulsed drain current,
t
p
= 1ms
1)
T
C
= 25 °C
Avalanche energy, single pulse
I
D
= 5.5 A,
V
DD
= 50 V
Avalanche energy (repetitive, limited by
T
jmax
)
I
D
= 13.8 A,
V
DD
= 50 V
Avalanche current (repetitive, limited by
T
jmax
)
Reverse diode dvdt
I
S
= 11 A,
V
DS
<
V
DSS
,
didt
= 100 A/μs,
T
jmax
= 150 °C
Gate source voltage
Power dissipation
T
C
= 25 °C
Operating and storage temperature
Symbol
I
D
Value
11
7
Unit
A
I
D puls
22
E
AS
340
mJ
E
AR
1
I
AR
dvdt
13.8
6
A
kV/μs
V
GS
P
tot
±
20
125
V
W
T
j ,
T
stg
-55... +150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| spp11n60 | OptiMOS Power-Transistor( MOS 型功率晶体管) |
| SPB12N50C3 | Cool MOS⑩ Power Transistor |
| SPI12N50C3 | Cool MOS⑩ Power Transistor |
| SPA12N50C3 | Cool MOS⑩ Power Transistor |
| SPP12N50C3 | Cool MOS⑩ Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPB11N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N D2-PAK |
| SPB11N60S5_05 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge |
| SPB11N60S5ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:COOL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 11A TO-263 |
| SPB11N80C3 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPB-12 | 功能描述:电线鉴定 WIRE MARK BK A-Z + - RoHS:否 制造商:TE Connectivity / Q-Cees 产品:Labels and Signs 类型: 材料:Vinyl 颜色:Blue 宽度:0.625 in 长度:1 in |
发布紧急采购，3分钟左右您将得到回复。