参数资料
型号: SPD2540SMSTX
厂商: SOLID STATE DEVICES INC
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.5 A, 40 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, SMS, 2 PIN
文件页数: 2/2页
文件大小: 159K
代理商: SPD2540SMSTX
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SPD2520
thru
SPD2540
ELECTRICAL CHARACTERISTICS
Symbol
Max
Unit
Instantaneous Forward Voltage Drop
(IF = 1ADC, TA = 25
°C, 300-500 μs Pulse)
IF = 100mADC
IF = 500mADC
VF1
VF2
0.5
0.75
Volts
Reverse Leakage Current
(Rated VR, TA = 25
°C, 300 μs minimum Pulse)
IR1
5
A
Reverse Leakage Current
(Rated VR, TA = 100
°C, 300 μs minimum Pulse)
IR2
1
mA
Junction Capacitance
(VR = 10 VDC, TA = 25
°C, f = 1 MHz)
CJ
10
pF
DIMENSIONS
CODE
MIN.
MAX.
A
.060”
.080”
B
.140”
.160”
C
1.00”
---
AXIAL CASE OUTLINE: (DO-35)
Note: Lead diameter is not controlled within 0.050” of the diode body.
D
.018”
.022”
DIMENSIONS
CODE
MIN.
MAX.
A
.092”
.098”
B
.190”
.215”
C
.022”
.028”
SMS CASE OUTLINE:
Note: Dimensions prior to solder dipping.
D
.002”
---
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0109E
DOC
相关PDF资料
PDF描述
SPD2540TX 0.5 A, 40 V, SILICON, SIGNAL DIODE, DO-35
SPD2520SMSTXV 0.5 A, 20 V, SILICON, SIGNAL DIODE
SPD2520TX 0.5 A, 20 V, SILICON, SIGNAL DIODE, DO-35
SPD2540S 0.5 A, 40 V, SILICON, SIGNAL DIODE, DO-35
SPD2540SMSTXV 0.5 A, 40 V, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
SPD25D28-15 制造商:SENSITRON 制造商全称:Sensitron 功能描述:DC Solid State Power Controller Module
SPD25D28-20 制造商:SENSITRON 制造商全称:Sensitron 功能描述:DC Solid State Power Controller Module
SPD25D28-25 制造商:SENSITRON 制造商全称:Sensitron 功能描述:DC Solid State Power Controller Module
SPD25N06S2-40 功能描述:MOSFET N-CH 55V 29A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SPD26N06S2L-35 功能描述:MOSFET N-CH 55V 30A DPAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件