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参数资料
| 型号： | SPD3595SMTX |
| 厂商： | SOLID STATE DEVICES INC |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.15 A, 125 V, SILICON, SIGNAL DIODE |
| 封装： | HERMETIC SEALED, SM, MELF-2 |
| 文件页数： | 1/2页 |
| 文件大小： | 107K |
| 代理商： | SPD3595SMTX |
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0127C
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SPD____ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level (for SM, use –S)
│
└ Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
(MELF)
SMS = Surface Mount Square Tab
│
└
Device Type ( VRWM )
3595 = 125 V
SPD3595
150 mA
125 VOLT
3
μsec STANDARD RECOVERY
RECTIFIER
FEATURES:
Standard Reverse Recovery Time: 3
μsec Max
Hermetically Sealed
Planar Passivated Chip
For High Efficiency Applications
Available in Axial, Subminiature Round Tab &
Subminiature Square Tab Versions
Faster Devices Available – Contact Factory
TX, TXV, and S-Level Screening Available
2/
Replacement for 1N3595
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRWM
VR
125
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
IO
150
mAmps
Peak Surge Current
(t = 1sec, Ta = 25°C)
IFSM
500
mAmps
Operating & Storage Temperature
TOP and TSTG
-65 to +175
°C
Thermal Resistance
Junction to End Tab (SM & SMS)
Axial- Junction to Lead @ .375”
RθJE
RθJL
100
250
°C/W
NOTES:
1/ For Ordering Information, Price, and
Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500.
Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical
Characteristics @25C.
Axial Leaded
SM
SMS
相关PDF资料 |
PDF描述 |
|---|---|
| SPD3595SMTXV | 0.15 A, 125 V, SILICON, SIGNAL DIODE |
| SPD3899 | 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-5 |
| SPD3903 | 20 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 |
| SPD3901 | 20 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 |
| SPD3900 | 20 A, 100 V, SILICON, RECTIFIER DIODE, DO-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPD3595SMTXV | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:150mA 125 VOLT 3 nsec STANDARD RECOVERY |
| SPD3595TX | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:150mA 125 VOLT 3 nsec STANDARD RECOVERY |
| SPD3595TXV | 制造商:SSDI 制造商全称:Solid States Devices, Inc 功能描述:150mA 125 VOLT 3 nsec STANDARD RECOVERY |
| SPD35N10 | 功能描述:MOSFET N-CH 100V 35A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPD35N10T | 制造商:Infineon Technologies AG 功能描述:POWERFET 100V 35A |
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