参数资料
型号: SPD5627TXV
厂商: SOLID STATE DEVICES INC
元件分类: 参考电压二极管
英文描述: 3 A, 800 V, SILICON, RECTIFIER DIODE
封装: HERMETIC SEALED PACKAGE-2
文件页数: 1/2页
文件大小: 39K
代理商: SPD5627TXV
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: R00019B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SPD56__ __ __
L Screening
2/
= None
TX = TX Level
TXV = TXV Level
S = S Level
L
Package
__ = Axial Leaded
SMS = Surface Mount Square Tab
L
Voltage
24 = 200 V
25 = 400 V
26 = 600 V
27 = 800 V
28 = 1000 V
SPD5624 - SPD5628
and
SPD5624SMS - SPD5628SMS
3 AMP
200-1000 Volts
5
μsec
STANDARD RECOVERY RECTIFIER
Features:
Fast Recovery: 5 μsec Max.
PIV to 1000 Volts
Low Reverse Leakage Current
Hermetically Sealed
Single Chip Construction
High Surge Rating
Low Thermal Resistance
Available in Axial Leaded and Surface Mount Versions
Available in Fast, Ultra Fast, and Hyper Fast Versions –
Contact Factory
Replacement for 1N5624-1N5628 and 1N5624US-
1N5628US
Maximum Ratings
Symbol
Value
Units
Peak Repetitive Reverse and
DC Blocking Voltage
SPD5624 & SPD5624SMS
SPD5625& SPD5625SMS
SPD5626 & SPD5626SMS
SPD5627 & SPD5627SMS
SPD5628 & SPD5628SMS
VRRM
VRWM
VR
200
400
600
800
1000
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25C)
Io
3
Amps
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25C)
IFSM
125
Amps
Operating & Storage Temperature
Top & Tstg
-65 to +175
C
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
RθJL
25
C/W
Notes:
1/ For Ordering Information, Price, Operating Curves,
and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening
Flows Available on Request.
Axial Leaded
SMS (Square)
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