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参数资料
| 型号： | SPLCG81-0 |
| 元件分类： | 激光器 |
| 英文描述： | 808 nm, LASER DIODE |
| 文件页数： | 3/6页 |
| 文件大小： | 63K |
| 代理商： | SPLCG81-0 |
SPL CGxx_0
2000-01-01
3
OPTO SEMICONDUCTORS
Kennwerte (
T
A = 25 °C)
Characteristics
Parameter
Symbol
Werte
Values
Einheit
Unit
min.
typ.
max.
Zentrale Emissionswellenlnge
1)
Emission wavelength
1)
λ
peak
805
972
808
975
811
978
nm
Spektrale Breite (Halbwertsbreite)
1)
Spectral width (FWHM)
1)
λ
–3.0
–nm
Opt. Ausgangsleistung im Betriebspunkt
2)
Output power
2)
P
op
–1.0
–W
Differentielle Effizienz
2)
808 nm
Differential efficiency
2)
975 nm
η
–
1.1
0.85
–
W/A
Schwellstrom
808 nm
Threshold current
975 nm
I
th
–
0.35
0.25
–
A
Betriebsstrom
1)
808 nm
Operating current
1)
975 nm
I
op
–
1.3
1.4
1.6
1.7
A
Betriebsspannung
1)4)
Operating voltage
1)4)
V
op
–2.0
–V
Differentieller Serienwiderstand
Differential series resistance
R
s
–0.2
0.4
Austrittsffnung
Aperture size
w
× h
–100
× 1–
m2
Strahldivergenz (Halbwertsbreite)
Beam divergence (FWHM)
θ
|| × θ
⊥
–8°
× 38° –
Grad
deg.
Charakteristische Temperatur (Schwelle)
3)
Characteristic temperature (threshold)
3)
T
0
–150
–K
Temperaturkoeffizient des Betriebsstroms
Temperature coefficient of operating current
I
op / IopT
–
0.5
–
%/K
Temperaturkoeffizient der Wellenlnge
4)
Temperature coefficient of wavelength
4)
λ/T
–0.3
–nm/K
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