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参数资料
| 型号： | SPLCG98 |
| 厂商： | SIEMENS A G |
| 元件分类： | 激光器 |
| 英文描述： | Laser Diode on Submount 1.0 W cw Class 4 Laser Product |
| 中文描述： | 980 nm, LASER DIODE |
| 文件页数： | 2/5页 |
| 文件大小： | 91K |
| 代理商： | SPLCG98 |
SPL CGxx
(SFH 4804x2)
Semiconductor Group
2
Characteristics
(
T
A
= 25 °C)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Emission wavelength
1)
λ
peak
803
840
935
808
850
940
813
860
945
nm
Spectral width (FWHM)
1)
λ
2
nm
Output power
2)
P
opt
η
1.0
W
Differential efficiency
2)
808 nm
850 nm
940 nm
0.75
0.75
0.70
0.95
0.85
0.80
1.1
1.0
0.9
W/A
Threshold current
808 nm
850 nm
940 nm
I
th
0.40
0.30
0.30
0.45
0.40
0.35
0.55
0.50
0.40
A
Operating current
1)
808 nm
850 nm
940 nm
I
op
1.3
1.3
1.4
1.5
1.5
1.6
1.8
1.8
1.8
A
Operating voltage
1)
V
op
2.0
V
Differential series resistance
r
s
–
0.2
0.4
Characteristic temperature (threshold)
3)
T
0
I
op
/
T
150
K
Temperature coefficient of operating
current
0.5
%/K
Temperature coefficient of wavelength
4)
λ
/
T
0.25
0.27
0.30
nm/K
Thermal resistance (junction
→
heat sink)
R
th JA
10
K/W
1) Standard operating conditions refer to 1 W cw measured with NA = 0.6
2) Optical power measurements refer to a detector with NA = 0.6
3) Model for the thermal behavior of threshold current:
I
th
(
T
2
) =
I
th
(
T
1
)
×
exp(
T
2
–
T
1
)/
T
0
4) Depending on emission wavelength
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