参数资料
型号: SPN03N60C3
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 8/12页
文件大小: 268K
代理商: SPN03N60C3
2004-03-01
Page 8
SPN03N60C3
Rev. 2.0
13 Typ. switching time
t
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=20
0
0.5
1
1.5
2
2.5
A
3.5
I
D
0
10
20
30
40
50
60
70
80
ns
100
t
td(off)
tf
td(on)
tr
14 Typ. drain source voltage slope
d
v
/d
t
= f(
R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=0.7A
0
20
40
60
80
100 120 140 160
200
R
G
0
10
20
30
40
50
60
70
V/ns
90
d
v
/
t
dv/dt(on)
dv/dt(off)
15 Typ. switching losses
E
=
f
(
I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=20
0
0.5
1
1.5
2
2.5
A
3.5
I
D
0
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0.008
mWs
0.01
E
Eon*
Eoff
*) Eon includes SDP06S60
diode commutation losses.
16 Typ. switching losses
E
=
f
(
R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=0.7A
0
40
80
120
160
220
R
G
0
0.006
0.012
0.018
0.024
0.03
0.036
0.042
0.048
mWs
0.06
E
Eon*
Eoff
*) Eon includes SDP06S60
diode commutation losses.
相关PDF资料
PDF描述
SPN03N60S5 Cool MOS⑩ Power Transistor
SPN03N60S5 Cool MOS Small-Signal-Transistor(Cool MOS 小信号晶体管)
SPN04N60C2 Cool MOS⑩ Power Transistor
SPN04N60S5 Cool MOS⑩ Power Transistor
SPP03N60S5 Cool MOS Power-Transistor(Cool MOS 功率晶体管)
相关代理商/技术参数
参数描述
SPN03N60C3 E6433 功能描述:MOSFET COOL MOS N-CH 650V 0.7A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SPN03N60C3_05 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS Power Transistor Feature
SPN03N60C3NT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 0.7A 4-Pin(3+Tab) SOT-223 T/R
SPN03N60C3T 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 0.7A 4-Pin(3+Tab) SOT-223 T/R
SPN03N60C3XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 0.7A 4-Pin(3+Tab) SOT-223