参数资料
型号: SPN03N60S5
厂商: INFINEON TECHNOLOGIES AG
英文描述: Cool MOS⑩ Power Transistor
中文描述: 酷马鞍山⑩功率晶体管
文件页数: 3/12页
文件大小: 268K
代理商: SPN03N60S5
2004-03-01
Page 3
SPN03N60C3
Rev. 2.0
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
-
typ.
3.4
max.
-
Transconductance
g
fs
V
DS
2*
I
D
*
R
DS(on)max
,
I
D
=0.4A
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
400
-
pF
-
150
-
Reverse transfer capacitance
Effective output capacitance,
2)
energy related
-
5
-
V
GS
=0V,
V
DS
=0V to 480V
-
12
-
pF
Effective output capacitance,
3)
time related
C
o(tr)
-
26
-
Turn-on delay time
Rise time
Turn-off delay time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=350V,
V
GS
=0/10V,
I
D
=0.7A,
R
G
=20
-
7
-
ns
-
3
-
-
64
100
Fall time
-
12
20
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=420V,
I
D
=0.7A
-
2
-
nC
Gate to drain charge
-
6
-
Gate charge total
V
DD
=420V,
I
D
=0.7A,
V
GS
=0 to 10V
-
13
17
Gate plateau voltage
V
(plateau)
V
DD
=420V,
I
D
=0.7A
-
5.5
-
V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
2
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
3
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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