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参数资料
| 型号： | SPP04N60S5 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Cool MOS⑩ Power Transistor |
| 中文描述： | 酷马鞍山⑩功率晶体管 |
| 文件页数： | 4/14页 |
| 文件大小： | 164K |
| 代理商： | SPP04N60S5 |
2002-08-12
Page 4
SPP04N60C2, SPB04N60C2
SPA04N60C2
Final data
Electrical Characteristics
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
4.5
A
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
I
SM
-
-
9
V
SD
t
rr
Q
rr
I
rrm
di
rr
/dt
V
GS
=0V,
I
F
=
I
S
-
-
-
-
-
1
1.2
1530
-
-
-
V
ns
μC
A
A/μs
V
R
=350V,
I
F
=
I
S
,
d
i
F
/d
t
=100A/μs
900
3.2
12
440
T
j
=25°C
Typical Transient Thermal Characteristics
Symbol
Value
SPP_B
Unit
Symbol
Value
Unit
SPA
0.039
0.075
0.102
0.27
0.594
2.536
SPA
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
0.039
0.083
0.101
0.262
0.294
0.094
K/W
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
0.00008293
0.000282
0.0004859
0.0006523
0.005017
0.052
0.0000734
0.000282
0.000401
0.000736
0.00501
0.412
Ws/K
SPP_B
External Heatsink
T
j
T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
相关PDF资料 |
PDF描述 |
|---|---|
| SPB07N60C2 | Cool MOS⑩ Power Transistor |
| SPB07N60C3 | Cool MOS⑩ Power Transistor |
| SPB07N60S5 | Cool MOS⑩ Power Transistor |
| SPA07N60C2 | Cool MOS⑩ Power Transistor |
| SPA07N60C3 | Cool MOS⑩ Power Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP04N60S5_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated |
| SPP04N60S5_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP04N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 4.5A TO-220 |
| SPP04N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220AB |
| SPP04N60S5IN | 制造商:Infineon Technologies AG 功能描述: |
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