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参数资料
| 型号： | SPP07N60S5 |
| 厂商： | SIEMENS AG |
| 英文描述： | Cool MOS Power-Transistor(Cool MOS 功率晶体管) |
| 中文描述： | 酷MOS功率晶体管（酷马鞍山功率晶体管） |
| 文件页数： | 2/9页 |
| 文件大小： | 113K |
| 代理商： | SPP07N60S5 |
2
2000-01-31
SPP07N60S5
SPB07N60S5
Electrical Characteristics
, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Thermal Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient
(Leaded and through-hole packages)
R
thJC
R
thJA
-
-
-
-
1.5
62
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
R
thJA
-
-
-
35
62
-
Static Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Drain-source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 350 μA,
T
j
= 25 °C
Zero gate voltage drain current,
V
DS
=
V
DSS
V
GS
= 0 V,
T
j
= 25 °C
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
Drain-source on-state resistance
V
GS
= 10 V,
I
D
= 4.6 A
V
(BR)DSS
600
-
-
V
V
GS(th)
3.5
4.5
5.5
I
DSS
-
-
0.5
-
1
100
μA
I
GSS
-
-
100
nA
R
DS(on)
-
0.54
0.6
W
1current limited by Tjmax
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP07N60S5 | 制造商:Infineon Technologies AG 功能描述:MOSFET N TO-220 |
| SPP07N60S5_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Cool MOS? Power Transistor Feature New revolutionary high voltage technology |
| SPP07N60S5BKSA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 7.3A TO-220AB |
| SPP07N60S5HKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube |
| SPP07N60S5XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 |
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