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参数资料
| 型号： | SPP100N08S2L-07 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶体管 |
| 文件页数： | 2/8页 |
| 文件大小： | 309K |
| 代理商： | SPP100N08S2L-07 |
2003-05-09
Page 2
SPP100N08S2-07
SPB100N08S2-07
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
0.3
0.5
K/W
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
-
-
62
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
Zero gate voltage drain current
V
(BR)DSS
75
-
-
V
V
GS(th)
2.1
3
4
V
DS
=75V,
V
GS
=0V,
T
j
=25°C
V
DS
=75V,
V
GS
=0V,
T
j
=125°C
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=66A
V
GS
=10V,
I
D
=66A, SMD version
R
DS(on)
-
-
5.6
5.3
7.1
6.8
m
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 133A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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