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参数资料
| 型号： | SPP18P06P |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CAT 5 SOLID PVC CABLE STRGHT PIN, 100 MHZ-BLUE |
| 中文描述： | SIPMOS功率晶体管 |
| 文件页数： | 4/9页 |
| 文件大小： | 100K |
| 代理商： | SPP18P06P |
1999-11-22
Page 4
SPP18P06P
SPB18P06P
Preliminary data
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Unit
Values
typ.
Symbol
min.
max.
Dynamic Characteristics
Gate to source charge
V
DD
= -48 ,
I
D
= -18.6 A
Gate to drain charge
V
DD
= -48 V,
I
D
= -18.6 A
Gate charge total
V
DD
= -48 V,
I
D
= -18.6 ,
V
GS
= 0 to -10 V
Gate plateau voltage
V
DD
= -48 ,
I
D
= -18.6 A
-
Q
gs
nC
6.6
4.4
Q
gd
9.3
14
-
33
-
Q
g
22
V
(plateau)
-
-5.56
-
V
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 °C
Inverse diode direct current,pulsed
T
C
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= -18.6 A
Reverse recovery time
V
R
= -30 V,
I
F
=
I
S
,
di
F
/dt
= 100 A/μs
Reverse recovery charge
V
R
= -30 V,
I
F=
l
S
,
di
F
/dt
= 100 A/μs
I
S
-
-
-18.6
A
I
SM
-
-
-74.4
V
SD
-
-1
-1.33
V
t
rr
-
70
105
ns
Q
rr
-
139
208
nC
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SPP18P06P H | 功能描述:MOSFET SIPMOS Power Transistor RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPP18P06P | 制造商:Infineon Technologies AG 功能描述:MOSFET P TO-220 |
| SPP18P06P_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:SIPMOS? Power-Transistor Features P-Channel Enhancement mode |
| SPP18P06PG | 功能描述:MOSFET P-KANAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SPP18P06PG_10 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:SIPMOS Power-Transistor |
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